SPT40N120 Todos los transistores

 

SPT40N120 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPT40N120

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 400 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 64 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 65 nS

Coesⓘ - Capacitancia de salida, typ: 295 pF

Encapsulados: TO247

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SPT40N120 datasheet

 ..1. Size:1640K  cn sptech
spt40n120 spl40n120.pdf pdf_icon

SPT40N120

SPTECH Product Specification SPT40N120 SPL40N12 1200V 40A High Speed IGBT FEATURES 1200V Trench & Field Stop technology Low saturation voltage High switching frequency Very soft , fast recovery anti-parallel diode G G C APPLICATIONS C E TO-247 E TO-264 Welding converters Uninterruptible Power Supply C General purpose inverters Ordering Information

 0.1. Size:7063K  cn sps
spt40n120f1ct8tl.pdf pdf_icon

SPT40N120

SPT40N120F1CT8TL 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.5 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable

 0.2. Size:5763K  cn sps
spt40n120f1a1t8tl.pdf pdf_icon

SPT40N120

SPT40N120F1A1T8TL 1200V / 40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due

 0.3. Size:5545K  cn sps
spt40n120t1bt8tl.pdf pdf_icon

SPT40N120

SPT40N120T1BT8TL 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.7 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable

Otros transistores... SPT15N120F1 , SPT15N120T1 , SPT15N65T1 , SPT20N120F1 , SPT25N120F1A1 , SPT25N120T1 , SPT25N120U1 , SPT25N135F1A , CRG60T60AK3HD , SPL40N120 , SPT40N120F1A , SPT40N120F1A1 , SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , SPT60N65F1A1 .

History: SII200N06 | VS-ETF075Y60U | SII75N12 | SRE40N065FSUDG | SGL40N150D | TGAN40S160FD | YGW50N120FP

 

 

 


History: SII200N06 | VS-ETF075Y60U | SII75N12 | SRE40N065FSUDG | SGL40N150D | TGAN40S160FD | YGW50N120FP

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