SPT40N120 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPT40N120
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 400 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 64 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
trⓘ - Tiempo de subida, typ: 65 nS
Coesⓘ - Capacitancia de salida, typ: 295 pF
Encapsulados: TO247
Búsqueda de reemplazo de SPT40N120 IGBT
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SPT40N120 datasheet
spt40n120 spl40n120.pdf
SPTECH Product Specification SPT40N120 SPL40N12 1200V 40A High Speed IGBT FEATURES 1200V Trench & Field Stop technology Low saturation voltage High switching frequency Very soft , fast recovery anti-parallel diode G G C APPLICATIONS C E TO-247 E TO-264 Welding converters Uninterruptible Power Supply C General purpose inverters Ordering Information
spt40n120f1ct8tl.pdf
SPT40N120F1CT8TL 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.5 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable
spt40n120f1a1t8tl.pdf
SPT40N120F1A1T8TL 1200V / 40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due
spt40n120t1bt8tl.pdf
SPT40N120T1BT8TL 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.7 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable
Otros transistores... SPT15N120F1 , SPT15N120T1 , SPT15N65T1 , SPT20N120F1 , SPT25N120F1A1 , SPT25N120T1 , SPT25N120U1 , SPT25N135F1A , CRG60T60AK3HD , SPL40N120 , SPT40N120F1A , SPT40N120F1A1 , SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , SPT60N65F1A1 .
History: SII200N06 | VS-ETF075Y60U | SII75N12 | SRE40N065FSUDG | SGL40N150D | TGAN40S160FD | YGW50N120FP
History: SII200N06 | VS-ETF075Y60U | SII75N12 | SRE40N065FSUDG | SGL40N150D | TGAN40S160FD | YGW50N120FP
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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