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SPT40N120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPT40N120
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 400 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 64 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 65 nS
   Coesⓘ - Capacitancia de salida, typ: 295 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

SPT40N120 Datasheet (PDF)

 ..1. Size:1640K  cn sptech
spt40n120 spl40n120.pdf pdf_icon

SPT40N120

SPTECH Product SpecificationSPT40N120 SPL40N121200V 40A High Speed IGBTFEATURES 1200V Trench & Field Stop technology Low saturation voltage High switching frequency Very soft , fast recovery anti-parallel diodeGGCAPPLICATIONS CETO-247 E TO-264 Welding converters Uninterruptible Power SupplyC General purpose invertersOrdering Information

 0.1. Size:7063K  cn sps
spt40n120f1ct8tl.pdf pdf_icon

SPT40N120

SPT40N120F1CT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 1.5 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

 0.2. Size:5763K  cn sps
spt40n120f1a1t8tl.pdf pdf_icon

SPT40N120

SPT40N120F1A1T8TL1200V / 40A Trench Field Stop IGBTFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability due

 0.3. Size:5545K  cn sps
spt40n120t1bt8tl.pdf pdf_icon

SPT40N120

SPT40N120T1BT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: SGM50PA12A6BTFD | IXGP12N100 | AUIRGS4062D1

 

 
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History: SGM50PA12A6BTFD | IXGP12N100 | AUIRGS4062D1

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