Справочник IGBT. SPT40N120

 

SPT40N120 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SPT40N120
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 400 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 64 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.2(typ) V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 65 nS
   Coesⓘ - Выходная емкость, типовая: 295 pF
   Qgⓘ - Общий заряд затвора, typ: 225 nC
   Тип корпуса: TO247

 Аналог (замена) для SPT40N120

 

 

SPT40N120 Datasheet (PDF)

 ..1. Size:1640K  cn sptech
 spt40n120 spl40n120.pdf

SPT40N120 SPT40N120

SPTECH Product SpecificationSPT40N120 SPL40N121200V 40A High Speed IGBTFEATURES 1200V Trench & Field Stop technology Low saturation voltage High switching frequency Very soft , fast recovery anti-parallel diodeGGCAPPLICATIONS CETO-247 E TO-264 Welding converters Uninterruptible Power SupplyC General purpose invertersOrdering Information

 0.1. Size:7063K  cn sps
 spt40n120f1ct8tl.pdf

SPT40N120 SPT40N120

SPT40N120F1CT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 1.5 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

 0.2. Size:5763K  cn sps
 spt40n120f1a1t8tl.pdf

SPT40N120 SPT40N120

SPT40N120F1A1T8TL1200V / 40A Trench Field Stop IGBTFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability due

 0.3. Size:5545K  cn sps
 spt40n120t1bt8tl.pdf

SPT40N120 SPT40N120

SPT40N120T1BT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

 0.4. Size:5972K  cn sps
 spt40n120t1b1t8tl.pdf

SPT40N120 SPT40N120

SPT40N120T1B1T8TL1200V /40A TrenchField Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

 0.5. Size:5557K  cn sps
 spt40n120f1at8tl.pdf

SPT40N120 SPT40N120

SPT40N120F1AT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet

 0.6. Size:1987K  cn sptech
 spt40n120f1a1.pdf

SPT40N120 SPT40N120

SPT40N120F1A11200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto p

 0.7. Size:1873K  cn sptech
 spt40n120f1a.pdf

SPT40N120 SPT40N120

SPT40N120F1A1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po

 0.8. Size:1659K  cn sptech
 spt40n120f1c.pdf

SPT40N120 SPT40N120

SPTECH Product SpecificationSPT40N120F1CFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto positive

 0.9. Size:2301K  cn sptech
 spt40n120t1b1.pdf

SPT40N120 SPT40N120

SPT40N120T1B11200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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