SPT40N120F1A Todos los transistores

 

SPT40N120F1A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPT40N120F1A
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 417 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 27 nS
   Coesⓘ - Capacitancia de salida, typ: 180 pF
   Paquete / Cubierta: TO247
 

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SPT40N120F1A Datasheet (PDF)

 ..1. Size:1873K  cn sptech
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SPT40N120F1A

SPT40N120F1A1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po

 0.1. Size:5763K  cn sps
spt40n120f1a1t8tl.pdf pdf_icon

SPT40N120F1A

SPT40N120F1A1T8TL1200V / 40A Trench Field Stop IGBTFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability due

 0.2. Size:5557K  cn sps
spt40n120f1at8tl.pdf pdf_icon

SPT40N120F1A

SPT40N120F1AT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet

 0.3. Size:1987K  cn sptech
spt40n120f1a1.pdf pdf_icon

SPT40N120F1A

SPT40N120F1A11200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto p

Otros transistores... SPT15N65T1 , SPT20N120F1 , SPT25N120F1A1 , SPT25N120T1 , SPT25N120U1 , SPT25N135F1A , SPT40N120 , SPL40N120 , NGD8201N , SPT40N120F1A1 , SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , SPT60N65F1A1 , SPD15N65T1T0TL , SPF15N65T1T1TL .

History: FD1200R17HP4-K-B2 | T0570VB25G | IXXK160N65B4 | IXGH30N60C3C1 | CM150E3U-24F | VS-GB90SA120U | F3L300R12MT4_B23

 

 
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