All IGBT. SPT40N120F1A Datasheet

 

SPT40N120F1A IGBT. Datasheet pdf. Equivalent


   Type Designator: SPT40N120F1A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 417
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 27
   Collector Capacity (Cc), typ, pF: 180
   Total Gate Charge (Qg), typ, nC: 270
   Package: TO247

 SPT40N120F1A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SPT40N120F1A Datasheet (PDF)

 ..1. Size:1873K  cn sptech
 spt40n120f1a.pdf

SPT40N120F1A SPT40N120F1A

SPT40N120F1A1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po

 0.1. Size:5763K  cn sps
 spt40n120f1a1t8tl.pdf

SPT40N120F1A SPT40N120F1A

SPT40N120F1A1T8TL1200V / 40A Trench Field Stop IGBTFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability due

 0.2. Size:5557K  cn sps
 spt40n120f1at8tl.pdf

SPT40N120F1A SPT40N120F1A

SPT40N120F1AT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet

 0.3. Size:1987K  cn sptech
 spt40n120f1a1.pdf

SPT40N120F1A SPT40N120F1A

SPT40N120F1A11200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto p

Datasheet: SPT15N65T1 , SPT20N120F1 , SPT25N120F1A1 , SPT25N120T1 , SPT25N120U1 , SPT25N135F1A , SPT40N120 , SPL40N120 , TGD30N40P , SPT40N120F1A1 , SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , SPT60N65F1A1 , SPD15N65T1T0TL , SPF15N65T1T1TL .

 

 
Back to Top