SPT40N120F1A1 Todos los transistores

 

SPT40N120F1A1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPT40N120F1A1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 417 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 27 nS

Coesⓘ - Capacitancia de salida, typ: 180 pF

Encapsulados: TO247

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SPT40N120F1A1 datasheet

 ..1. Size:1987K  cn sptech
 spt40n120f1a1.pdf pdf_icon

SPT40N120F1A1

SPT40N120F1A1 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due to p

 0.1. Size:5763K  cn sps
 spt40n120f1a1t8tl.pdf pdf_icon

SPT40N120F1A1

SPT40N120F1A1T8TL 1200V / 40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due

 2.1. Size:5557K  cn sps
 spt40n120f1at8tl.pdf pdf_icon

SPT40N120F1A1

SPT40N120F1AT8TL 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due t

 2.2. Size:1873K  cn sptech
 spt40n120f1a.pdf pdf_icon

SPT40N120F1A1

SPT40N120F1A 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due to po

MOSTRAR MÁS

Otros transistores... SPT20N120F1 , SPT25N120F1A1 , SPT25N120T1 , SPT25N120U1 , SPT25N135F1A , SPT40N120 , SPL40N120 , SPT40N120F1A , FGPF4633 , SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , SPT60N65F1A1 , SPD15N65T1T0TL , SPF15N65T1T1TL , SPF15N65T1T2TL .

History: SGM25PA12A8TFD | STGWA40H65FB | VS-GB55NA120UX | VS-GB600AH120N | RJQ6008DPM | STGB14NC60KD | SII150N06

 

 

 

 

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