SPT40N120F1C Todos los transistores

 

SPT40N120F1C IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPT40N120F1C

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 417 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 27 nS

Coesⓘ - Capacitancia de salida, typ: 180 pF

Encapsulados: TO247

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SPT40N120F1C datasheet

 ..1. Size:1659K  cn sptech
spt40n120f1c.pdf pdf_icon

SPT40N120F1C

SPTECH Product Specification SPT40N120F1C FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due to positive

 0.1. Size:7063K  cn sps
spt40n120f1ct8tl.pdf pdf_icon

SPT40N120F1C

SPT40N120F1CT8TL 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.5 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable

 3.1. Size:5763K  cn sps
spt40n120f1a1t8tl.pdf pdf_icon

SPT40N120F1C

SPT40N120F1A1T8TL 1200V / 40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due

 3.2. Size:5557K  cn sps
spt40n120f1at8tl.pdf pdf_icon

SPT40N120F1C

SPT40N120F1AT8TL 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due t

Otros transistores... SPT25N120F1A1 , SPT25N120T1 , SPT25N120U1 , SPT25N135F1A , SPT40N120 , SPL40N120 , SPT40N120F1A , SPT40N120F1A1 , CRG15T120BNR3S , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , SPT60N65F1A1 , SPD15N65T1T0TL , SPF15N65T1T1TL , SPF15N65T1T2TL , SPT10N120T1T8TL .

History: XNS40N120T | XP015PJE120AT1B1 | SII75N12 | SGL40N150D | TGAN40S160FD | SRE40N065FSUDG | YGW50N120FP

 

 

 

 

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