SPT40N120F1C - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: SPT40N120F1C
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 417
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
Максимальный постоянный ток коллектора |Ic| @25℃, A: 80
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.4
Максимальная температура перехода (Tj), ℃: 150
Время нарастания типовое (tr), nS: 27
Емкость коллектора типовая (Cc), pf: 180
Общий заряд затвора (Qg), typ, nC: 270
Тип корпуса: TO247
Аналог (замена) для SPT40N120F1C
SPT40N120F1C Datasheet (PDF)
spt40n120f1c.pdf
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SPTECH Product SpecificationSPT40N120F1CFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto positive
spt40n120f1ct8tl.pdf
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SPT40N120F1CT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 1.5 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable
spt40n120f1a1t8tl.pdf
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SPT40N120F1A1T8TL1200V / 40A Trench Field Stop IGBTFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability due
spt40n120f1at8tl.pdf
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SPT40N120F1AT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet
spt40n120f1a1.pdf
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SPT40N120F1A11200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto p
spt40n120f1a.pdf
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SPT40N120F1A1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po
Другие IGBT... SPT25N120F1A1 , SPT25N120T1 , SPT25N120U1 , SPT25N135F1A , SPT40N120 , SPL40N120 , SPT40N120F1A , SPT40N120F1A1 , IRG7R313U , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , SPT60N65F1A1 , SPD15N65T1T0TL , SPF15N65T1T1TL , SPF15N65T1T2TL , SPT10N120T1T8TL .
![SPT40N120F1C](https://alltransistors.com/images/us.png)
![SPT40N120F1C](https://alltransistors.com/images/es.png)
![SPT40N120F1C](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ