SPT50N65F1A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPT50N65F1A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
trⓘ - Tiempo de subida, typ: 22 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Encapsulados: TO247
Búsqueda de reemplazo de SPT50N65F1A IGBT
- Selección ⓘ de transistores por parámetros
SPT50N65F1A datasheet
spt50n65f1a1t8tl.pdf
SPT50N65F1A1T8TL 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 50 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering
spt50n65f1at8tl.pdf
SPT50N65F1AT8TL 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 50 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.8 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering
spt50n65f1a1.pdf
SPT50N65F1A1 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 50 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering
Otros transistores... SPT25N120U1 , SPT25N135F1A , SPT40N120 , SPL40N120 , SPT40N120F1A , SPT40N120F1A1 , SPT40N120F1C , SPT40N120T1B1 , GT45F122 , SPT50N65F1A1 , SPT60N65F1A1 , SPD15N65T1T0TL , SPF15N65T1T1TL , SPF15N65T1T2TL , SPT10N120T1T8TL , SPT15N120F1T8TL , SPT15N120T1T8TL .
History: STGW75M65DF2 | T1800GB45A | TGAN20N135F3D | SPT40N120T1B1 | VS-GB55LA120UX | RJP5001APP-00 | SGP10N60RUF
History: STGW75M65DF2 | T1800GB45A | TGAN20N135F3D | SPT40N120T1B1 | VS-GB55LA120UX | RJP5001APP-00 | SGP10N60RUF
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Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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