All IGBT. SPT50N65F1A Datasheet

 

SPT50N65F1A Datasheet and Replacement


   Type Designator: SPT50N65F1A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 260 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Qgⓘ - Total Gate Charge, typ: 180 nC
   Package: TO247
      - IGBT Cross-Reference

 

SPT50N65F1A Datasheet (PDF)

 ..1. Size:1808K  cn sptech
spt50n65f1a.pdf pdf_icon

SPT50N65F1A

SPT50N65F1A 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.8 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

 0.1. Size:5480K  cn sps
spt50n65f1a1t8tl.pdf pdf_icon

SPT50N65F1A

SPT50N65F1A1T8TL650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering

 0.2. Size:5494K  cn sps
spt50n65f1at8tl.pdf pdf_icon

SPT50N65F1A

SPT50N65F1AT8TL650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.8 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

 0.3. Size:1793K  cn sptech
spt50n65f1a1.pdf pdf_icon

SPT50N65F1A

SPT50N65F1A1 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: SKM50GB123D | CM1400DU-24NF | JNG75T65HYU2 | TT050K065FQ | JT600N120F2MHTE | AP20GT60ASP-HF | CRG15T120BK3SD

Keywords - SPT50N65F1A transistor datasheet

 SPT50N65F1A cross reference
 SPT50N65F1A equivalent finder
 SPT50N65F1A lookup
 SPT50N65F1A substitution
 SPT50N65F1A replacement

 

 
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