SPD15N65T1T0TL Todos los transistores

 

SPD15N65T1T0TL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPD15N65T1T0TL
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 27 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 80 pF
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

SPD15N65T1T0TL Datasheet (PDF)

 ..1. Size:6260K  cn sps
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SPD15N65T1T0TL

SPD15N65T1T0TL650V /15A Trench Field Stop IGBT V 650 V CEFeatures I 15 A C Max Junction Temperature 150C High breakdown voltage up to 650V forV I =15A 1.65 V CE(SAT) Cimproved reliability Short Circuit Rated Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching appli

 4.1. Size:1908K  cn sptech
spd15n65t1.pdf pdf_icon

SPD15N65T1T0TL

SPD15N65T1650V /15A Trench Field Stop IGBT Features Max Junction Temperature 150CV 650 V CE High breakdown voltage up to 650V forimproved reliabilityI 15 A C Short Circuit RatedV I =15A 1.65 V CE(SAT) C Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching application

 9.1. Size:639K  1
spd15p10pg spp15p10pg.pdf pdf_icon

SPD15N65T1T0TL

SPP15P10P GSPD15P10P GSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 0.24DS(on),max Enhancement modeI -15 AD Normal level Avalanche ratedPG-TO220-3 PG-TO252-3 Pb-free lead plating; RoHS compliantType Package Marking Lead free PackingSPP15P10P G PG-TO220-3 15P10P Yes Non drySPD15P10P G PG-TO252-3 15P10P Yes N

 9.2. Size:692K  infineon
spd15p10plg.pdf pdf_icon

SPD15N65T1T0TL

SPD15P10PL GSIPMOS Power-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 0.20DS(on),max Enhancement modeI -15 AD logic level Avalanche ratedPG-TO252-3 Pb-free lead plating; RoHS compliantType Package Marking Lead free PackingSPD15P10PL G PG-TO252-3 15P10PL Yes Non dryMaximum ratings, at T =25 C, unless otherwise specifiedjPa

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History: JNG25T120AI | IXGH48N60A3 | GT50L101 | RGT8BM65D | APT35GN120B | FF150R12YT3

 

 
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