SPD15N65T1T0TL - параметры транзистора, его аналоги, Даташиты

SPD15N65T1T0TL Datasheet (PDF)

..1. Size:6260K cn sps
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SPD15N65T1T0TL650V /15A Trench Field Stop IGBT V 650 V CEFeatures I 15 A C Max Junction Temperature 150C High breakdown voltage up to 650V forV I =15A 1.65 V CE(SAT) Cimproved reliability Short Circuit Rated Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching appli

4.1. Size:1908K cn sptech
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SPD15N65T1650V /15A Trench Field Stop IGBT Features Max Junction Temperature 150CV 650 V CE High breakdown voltage up to 650V forimproved reliabilityI 15 A C Short Circuit RatedV I =15A 1.65 V CE(SAT) C Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching application

9.1. Size:639K 1
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SPP15P10P GSPD15P10P GSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 0.24DS(on),max Enhancement modeI -15 AD Normal level Avalanche ratedPG-TO220-3 PG-TO252-3 Pb-free lead plating; RoHS compliantType Package Marking Lead free PackingSPP15P10P G PG-TO220-3 15P10P Yes Non drySPD15P10P G PG-TO252-3 15P10P Yes N

9.2. Size:692K infineon
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SPD15P10PL GSIPMOS Power-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 0.20DS(on),max Enhancement modeI -15 AD logic level Avalanche ratedPG-TO252-3 Pb-free lead plating; RoHS compliantType Package Marking Lead free PackingSPD15P10PL G PG-TO252-3 15P10PL Yes Non dryMaximum ratings, at T =25 C, unless otherwise specifiedjPa

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