SPF15N65T1T2TL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPF15N65T1T2TL
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 27
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 30
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.65
Tensión máxima de puerta-umbral |VGE(th)|, V: 5.7
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 25
Capacitancia de salida (Cc), typ, pF: 80
Carga total de la puerta (Qg), typ, nC: 92
Paquete / Cubierta: TO220F
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SPF15N65T1T2TL Datasheet (PDF)
spf15n65t1t2tl.pdf
SPF15N65T1T2TL650V /15A Trench Field Stop IGBT Features V 650 V CE Max Junction Temperature 150C High breakdown voltage up to 650V for I 15 A Cimproved reliabilityV I =15A 1.65 V CE(SAT) C Short Circuit Rated Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching applicat
spf15n65t1t1tl.pdf
SPF15N65T1T1TL650V /15A Trench Field Stop IGBT Features V 650 V CE Max Junction Temperature 150C High breakdown voltage up to 650V for I 15 A Cimproved reliabilityV I =15A 1.65 V CE(SAT) C Short Circuit Rated Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching applicat
Otros transistores... SPT40N120F1A1 , SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , SPT60N65F1A1 , SPD15N65T1T0TL , SPF15N65T1T1TL , MBQ40T65FDSC , SPT10N120T1T8TL , SPT15N120F1T8TL , SPT15N120T1T8TL , SPT25N120F1 , SPT25N120F1A1T8TL , SPT25N120T1T8TL , SPT25N120U1T8TL , SPT25N135F1AT8TL .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ