SPT10N120T1T8TL IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPT10N120T1T8TL
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 50 pF
Encapsulados: TO247
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SPT10N120T1T8TL datasheet
spt10n120t1t8tl.pdf
SPT10N120T1T8TL 1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 10 A C improved reliability V I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable
spt10n120t1.pdf
SPT10N120T1 1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 10 A C improved reliability V I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable
Otros transistores... SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , SPT60N65F1A1 , SPD15N65T1T0TL , SPF15N65T1T1TL , SPF15N65T1T2TL , IRGP4066D , SPT15N120F1T8TL , SPT15N120T1T8TL , SPT25N120F1 , SPT25N120F1A1T8TL , SPT25N120T1T8TL , SPT25N120U1T8TL , SPT25N135F1AT8TL , SPT40N120F1A1T8TL .
History: TGAN40N120F2DW | STGWT40H65DFB | STGB19NC60W | SGP15N60RUF
History: TGAN40N120F2DW | STGWT40H65DFB | STGB19NC60W | SGP15N60RUF
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