SPT10N120T1T8TL PDF and Equivalents Search

 

SPT10N120T1T8TL Specs and Replacement

Type Designator: SPT10N120T1T8TL

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 260 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 15 nS

Coesⓘ - Output Capacitance, typ: 50 pF

Package: TO247

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SPT10N120T1T8TL datasheet

 0.1. Size:5219K  cn sps
 spt10n120t1t8tl.pdf pdf_icon

SPT10N120T1T8TL

SPT10N120T1T8TL 1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 10 A C improved reliability V I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable ... See More ⇒

 3.1. Size:1546K  cn sptech
 spt10n120t1.pdf pdf_icon

SPT10N120T1T8TL

SPT10N120T1 1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 10 A C improved reliability V I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable ... See More ⇒

Specs: SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , SPT60N65F1A1 , SPD15N65T1T0TL , SPF15N65T1T1TL , SPF15N65T1T2TL , IRGP4066D , SPT15N120F1T8TL , SPT15N120T1T8TL , SPT25N120F1 , SPT25N120F1A1T8TL , SPT25N120T1T8TL , SPT25N120U1T8TL , SPT25N135F1AT8TL , SPT40N120F1A1T8TL .

Keywords - SPT10N120T1T8TL transistor spec

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