All IGBT. SPT10N120T1T8TL Datasheet

 

SPT10N120T1T8TL IGBT. Datasheet pdf. Equivalent


   Type Designator: SPT10N120T1T8TL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 260
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 20
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.8
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 15
   Collector Capacity (Cc), typ, pF: 50
   Total Gate Charge (Qg), typ, nC: 84
   Package: TO247

 SPT10N120T1T8TL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SPT10N120T1T8TL Datasheet (PDF)

 0.1. Size:5219K  cn sps
 spt10n120t1t8tl.pdf

SPT10N120T1T8TL SPT10N120T1T8TL

SPT10N120T1T8TL1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 10 A Cimproved reliabilityV I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

 3.1. Size:1546K  cn sptech
 spt10n120t1.pdf

SPT10N120T1T8TL SPT10N120T1T8TL

SPT10N120T11200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 10 A Cimproved reliabilityV I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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