SPT25N120T1T8TL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPT25N120T1T8TL
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 250
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 50
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.65
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.8
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 21
Capacitancia de salida (Cc), typ, pF: 105
Carga total de la puerta (Qg), typ, nC: 135
Paquete / Cubierta: TO247
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SPT25N120T1T8TL Datasheet (PDF)
spt25n120t1t8tl.pdf
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SPT25N120T1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel sw
spt25n120t1.pdf
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SPT25N120T11200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel switch
spt25n120u1t8tl.pdf
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SPT25N120U1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet
spt25n120f1.pdf
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SPT25N120F11200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 20 A Cimproved reliabilityV I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable
spt25n120f1a1t8tl.pdf
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SPT25N120F1A1T8TL1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V forV 1200 V CEimproved reliabilityI 25 A C Trench-Stop Technology offering : High speed switchingV I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low VCEsat Easy parallel switching capability dueto positive temperature coefficient inVCEsat En
spt25n120f1a1.pdf
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SPT25N120F1A11200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V forV 1200 V CEimproved reliabilityI 25 A C Trench-Stop Technology offering : High speed switchingV I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low VCEsat Easy parallel switching capability dueto positive temperature coefficient inVCEsat Enhanc
spt25n120u1.pdf
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SPT25N120U11200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po
Otros transistores... SPD15N65T1T0TL , SPF15N65T1T1TL , SPF15N65T1T2TL , SPT10N120T1T8TL , SPT15N120F1T8TL , SPT15N120T1T8TL , SPT25N120F1 , SPT25N120F1A1T8TL , MGD623S , SPT25N120U1T8TL , SPT25N135F1AT8TL , SPT40N120F1A1T8TL , SPT40N120F1AT8TL , SPT40N120F1CT8TL , SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL .
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