All IGBT. SPT25N120T1T8TL Datasheet

 

SPT25N120T1T8TL Datasheet and Replacement


   Type Designator: SPT25N120T1T8TL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 21 nS
   Coesⓘ - Output Capacitance, typ: 105 pF
   Qg ⓘ - Total Gate Charge, typ: 135 nC
   Package: TO247
 

 SPT25N120T1T8TL substitution

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SPT25N120T1T8TL Datasheet (PDF)

 0.1. Size:5580K  cn sps
 spt25n120t1t8tl.pdf pdf_icon

SPT25N120T1T8TL

SPT25N120T1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel sw

 3.1. Size:1896K  cn sptech
 spt25n120t1.pdf pdf_icon

SPT25N120T1T8TL

SPT25N120T11200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel switch

 5.1. Size:5254K  cn sps
 spt25n120u1t8tl.pdf pdf_icon

SPT25N120T1T8TL

SPT25N120U1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet

 5.2. Size:5495K  cn sps
 spt25n120f1.pdf pdf_icon

SPT25N120T1T8TL

SPT25N120F11200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 20 A Cimproved reliabilityV I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

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Keywords - SPT25N120T1T8TL transistor datasheet

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