SPT50N65F1AT8TL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPT50N65F1AT8TL
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 22 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de SPT50N65F1AT8TL IGBT
SPT50N65F1AT8TL Datasheet (PDF)
spt50n65f1at8tl.pdf

SPT50N65F1AT8TL650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.8 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :
spt50n65f1a1t8tl.pdf

SPT50N65F1A1T8TL650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering
spt50n65f1a1.pdf

SPT50N65F1A1 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :
spt50n65f1a.pdf

SPT50N65F1A 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.8 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :
Otros transistores... SPT25N120U1T8TL , SPT25N135F1AT8TL , SPT40N120F1A1T8TL , SPT40N120F1AT8TL , SPT40N120F1CT8TL , SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , FGL60N100BNTD , SPT60N65F1A1T8TL , XNF6N60T , XNG100B24TC1S5 , XNS25N120T , XNS40N120T , XD015H060CX1S3 , XD015H120CX1 , XD015H120CX1S3 .
History: DIM800FSS12-A | DIM800DDS12-A | MMG600WB060B6EN | APT50GS60BRDQ2G | AFGY120T65SPD | SRE30N065FSUDG | MG1275W-XBN2MM
History: DIM800FSS12-A | DIM800DDS12-A | MMG600WB060B6EN | APT50GS60BRDQ2G | AFGY120T65SPD | SRE30N065FSUDG | MG1275W-XBN2MM



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