XD050H120CX1S4 Todos los transistores

 

XD050H120CX1S4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: XD050H120CX1S4
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 714 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Coesⓘ - Capacitancia de salida, typ: 331 pF
   Paquete / Cubierta: TO247-PLUS
 

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XD050H120CX1S4 Datasheet (PDF)

 ..1. Size:665K  cn xdm
 xd050h120cx1s4.pdf pdf_icon

XD050H120CX1S4

XD050H120CX1S4 Trench Field-Stop Technology IGBT Features 1200V, 50A V =1.85V@V =15V, I =50A CE(sat)(typ.) GE C Low Switching Losses V with Positive Temperature Coefficient CE(sat) Pb-free Lead Plating; RoHS Compliant Applications Frequency Converters Uninterrupted Power Supply Air Conditioning Motor Drives Key Performance and Pac

 8.1. Size:711K  cn xdm
 xd050h065cx1s3.pdf pdf_icon

XD050H120CX1S4

XD050H065CX1S3 Trench Field-Stop Technology IGBT Features 650V, 50A V =1.55V@V =15V, I =50A CE(sat)(typ.) GE C Maximum Junction Temperature 175 Pb-free Lead Plating; RoHS Compliant Applications Solar Converters Uninterrupted Power Supply Welding Converters Mid to High Range Switching Frequency Converters Key Performance and Package Par

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