XP015PJE120AT1B1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: XP015PJE120AT1B1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 130
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 15(100C)
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.12
Tensión máxima de puerta-umbral |VGE(th)|, V: 5.6(typ)
Tiempo de subida (tr), typ, nS: 25
Capacitancia de salida (Cc), typ, pF: 85
Paquete / Cubierta: MODULE
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XP015PJE120AT1B1 Datasheet (PDF)
xp015pje120at1b1.pdf
XP015PJE120AT1B1PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTCFeatures Trench+ Field Stop Technology1200V Trench Field-Stop IGBT Low VCE(sat) with Low Switching LossesApplications Frequency CovertersMotor DrivesAuxiliary InvertersEquivalent Circuit SchematicIGBT - InverterMaximum Rated ValuesSymbol Description Conditions Values Unit
xp015pjs120cl1b1.pdf
XP015PJS120CL1B1PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTCFeaturesLow Switching Losses 1200V Trench Field-Stop IGBT Low VCE(sat) with Positive Temperature Coefficient Applications Auxiliary Inverters Air Conditioning Motor Drives Uninterruptive Power Supply (UPS)IGBT - InverterMaximum Rated ValuesSymbol Description Conditions
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ