XP015PJE120AT1B1 Todos los transistores

 

XP015PJE120AT1B1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: XP015PJE120AT1B1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 130 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15(100C) A

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.12 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Coesⓘ - Capacitancia de salida, typ: 85 pF

Encapsulados: MODULE

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XP015PJE120AT1B1 datasheet

 0.1. Size:807K  cn xdm
 xp015pje120at1b1.pdf pdf_icon

XP015PJE120AT1B1

XP015PJE120AT1B1 PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTC Features Trench+ Field Stop Technology 1200V Trench Field-Stop IGBT Low VCE(sat) with Low Switching Losses Applications Frequency Coverters Motor Drives Auxiliary Inverters Equivalent Circuit Schematic IGBT - Inverter Maximum Rated Values Symbol Description Conditions Values Unit

 7.1. Size:697K  cn xdm
 xp015pjs120cl1b1.pdf pdf_icon

XP015PJE120AT1B1

XP015PJS120CL1B1 PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTC Features Low Switching Losses 1200V Trench Field-Stop IGBT Low VCE(sat) with Positive Temperature Coefficient Applications Auxiliary Inverters Air Conditioning Motor Drives Uninterruptive Power Supply (UPS) IGBT - Inverter Maximum Rated Values Symbol Description Conditions

Otros transistores... XD015H120CX1S3 , XD025H120CX1 , XD025H120CX1S3 , XD040H120AT1S3 , XD040Q120AT1S3 , XD050H065CX1S3 , XD050H120CX1S4 , XD075H065CX1S3 , GT30F125 , XP015PJS120CL1B1 , XP025PJE120AT1B2 , XP035PJE120AT1B2 , XP040PJE120AL1B2 , XP050PCE120AT1E2 , XP075HFN120CT1R3 , XP075PCE120AL1E3 , XP15PJS120CL1B1 .

History: SKM100GB124D | SGW23N60UF | SII75N12 | TGAN40S160FD | SRE40N065FSUDG | SGL40N150D | YGW50N120FP

 

 

 

 

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