XP25PJT120C0B2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: XP25PJT120C0B2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 190 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
trⓘ - Tiempo de subida, typ: 20 nS
Encapsulados: MODULE
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XP25PJT120C0B2 datasheet
xp25pjt120c0b2.pdf
XP25PJT120C0B2 PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTC Features Low Switching Losses 1200V Trench Field-Stop IGBT Low VCE(sat) with Positive Temperature Coefficient Typical Applications Auxiliary Inverters Air Conditioning Motor Drives Uninterruptive Power Supply (UPS) IGBT - Inverter Maximum Rated Values Symbol Description Con
Otros transistores... XP015PJS120CL1B1 , XP025PJE120AT1B2 , XP035PJE120AT1B2 , XP040PJE120AL1B2 , XP050PCE120AT1E2 , XP075HFN120CT1R3 , XP075PCE120AL1E3 , XP15PJS120CL1B1 , KGF75N65KDF , SGM100HF12A1TFD , SGM100HF12A1TFDT4 , SGM100HF12A3TFD , SGM150HF12A3TFD , SGM200HF12A3TFD , SGM25PA12A8TFD , SGM35PA12A6BTFD , SGM40HF12A1TFD .
History: SGP13N60UF | RJP60F5DPK | TGAF40N60F2D | VS-GB150LH120N | NGTB45N60S2 | TGAN60N65F2DR | SRE50N120FSUDAT
History: SGP13N60UF | RJP60F5DPK | TGAF40N60F2D | VS-GB150LH120N | NGTB45N60S2 | TGAN60N65F2DR | SRE50N120FSUDAT
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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