SGM100HF12A3TFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGM100HF12A3TFD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100(80C) A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
Tjⓘ - Temperatura máxima de unión: 125 ℃
trⓘ - Tiempo de subida, typ: 157 nS
Coesⓘ - Capacitancia de salida, typ: 2000 pF
Qgⓘ - Carga total de la puerta, typ: 742 nC
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
SGM100HF12A3TFD Datasheet (PDF)
sgm100hf12a3tfd.pdf
SGM100HF12A3TFD 100A1200V IGBT 0B SGM100HF12A3TFD 1B 100A1200VVCE(sat)( ) =2.1V@IC=100A VCE(sat) A3 DBC
sgm100hf12a1tfdt4.pdf
SGM100HF12A1TFDT4 100A1200V IGBT SGM100HF12A1TFDT4 100A1200VVCE(sat)( ) =2.1V@IC=100A VCE(sat) A1 DBC
sgm100hf12a1tfd.pdf
SGM100HF12A1TFD 100A, 1200V IGBT 0B SGM100HF12A1TFD 1B 100A1200VVCE(sat)( ) =2.1V@IC=100A VCE(sat) A1 DBC
Otros transistores... XP040PJE120AL1B2 , XP050PCE120AT1E2 , XP075HFN120CT1R3 , XP075PCE120AL1E3 , XP15PJS120CL1B1 , XP25PJT120C0B2 , SGM100HF12A1TFD , SGM100HF12A1TFDT4 , FGW75N60HD , SGM150HF12A3TFD , SGM200HF12A3TFD , SGM25PA12A8TFD , SGM35PA12A6BTFD , SGM40HF12A1TFD , SGM50HF12A1TFD , SGM50HF12A1TFDT4 , SGM50PA12A6BTFD .
History: HGTH12N40C1 | TGH40N65F2DS | YGW15N120T3 | HM20N120TB | OST40N120HEMF | IRGI4086 | SGM100HF12A1TFDT4
History: HGTH12N40C1 | TGH40N65F2DS | YGW15N120T3 | HM20N120TB | OST40N120HEMF | IRGI4086 | SGM100HF12A1TFDT4
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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