SGTP5T60SD1D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGTP5T60SD1D  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 82 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 14 nS

Coesⓘ - Capacitancia de salida, typ: 26 pF

Encapsulados: TO252

  📄📄 Copiar 

 Búsqueda de reemplazo de SGTP5T60SD1D IGBT

- Selecciónⓘ de transistores por parámetros

 

SGTP5T60SD1D datasheet

 ..1. Size:648K  silan
sgtp5t60sd1d sgtp5t60sd1f sgtp5t60sd1s.pdf pdf_icon

SGTP5T60SD1D

SGTP5T60SD1D/F/S 5A 600V C 2 SGTP5T60SD1D/F/S 1 G 1 Field Stop 3 UPS SMPS PFC TO-252-2L 3 E 5A 600V VCE(sat)( )=1.5V@IC=5

 0.1. Size:411K  silan
sgtp5t60sd1dtr sgtp5t60sd1f sgtp5t60sd1s sgtp5t60sd1str.pdf pdf_icon

SGTP5T60SD1D

SGTP5T60SD1D(F)(S) 5A 600V C 2 SGTP5T60SD1D/F/S 1 G 1 Field Stop 3 UPS SMPS PFC TO-252-2L 3 E 5A 600V VCE(sat)( )=1.5V@IC=

 9.1. Size:487K  silan
sgtp50t120fdb4pwa.pdf pdf_icon

SGTP5T60SD1D

SGTP50T120FDB4PWA 50A 1200V C 2 SGTP50T120FDB4PWA 1 G Field Stop IV UPS SMPS PFC 3 E 50A 1200V VCE(sat)( )=2.0V@IC=50A

 9.2. Size:472K  silan
sgtp50v65sdb1p7.pdf pdf_icon

SGTP5T60SD1D

Otros transistores... SGT25U120FD1P7, SGT40N60FD2PN, SGT40N60FD2P7, SGT40N60NPFDPN, SGT50T65FD1PN, SGT50T65FD1P7, SGT50T65FD1PS, SGT50T65FD1PT, FGA60N65SMD, SGTP5T60SD1F, SGTP5T60SD1S, AU40N120T3A2, LGM100HF120S2F1A, LGM400HF65S4T1A, YGF15N65T2, YGK15N65T2, YGP15N65T2