SGTP5T60SD1S Todos los transistores

 

SGTP5T60SD1S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGTP5T60SD1S
   Tipo de transistor: IGBT + Diode
   Código de marcado: P5T60SD1S
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 83 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 14 nS
   Coesⓘ - Capacitancia de salida, typ: 26 pF
   Qgⓘ - Carga total de la puerta, typ: 18.5 nC
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

SGTP5T60SD1S Datasheet (PDF)

 ..1. Size:648K  silan
 sgtp5t60sd1d sgtp5t60sd1f sgtp5t60sd1s.pdf pdf_icon

SGTP5T60SD1S

SGTP5T60SD1D/F/S 5A600V C 2SGTP5T60SD1D/F/S 1G1Field Stop3 UPSSMPS PFC TO-252-2L3E 5A600VVCE(sat)( )=1.5V@IC=5

 ..2. Size:411K  silan
 sgtp5t60sd1dtr sgtp5t60sd1f sgtp5t60sd1s sgtp5t60sd1str.pdf pdf_icon

SGTP5T60SD1S

SGTP5T60SD1D(F)(S) 5A600V C 2SGTP5T60SD1D/F/S 1G1Field Stop3 UPSSMPS PFC TO-252-2L3E 5A600VVCE(sat)( )=1.5V@IC=

 9.1. Size:487K  silan
 sgtp50t120fdb4pwa.pdf pdf_icon

SGTP5T60SD1S

SGTP50T120FDB4PWA 50A1200V C 2SGTP50T120FDB4PWA 1GField Stop IVUPSSMPS PFC 3 E 50A1200VVCE(sat)( )=2.0V@IC=50A

 9.2. Size:472K  silan
 sgtp50v65sdb1p7.pdf pdf_icon

SGTP5T60SD1S

SGTP50V65SDB1P7 50A650V C 2SGTP50V65SDB1P7 1GField Stop 5UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.45V@IC=50A

MOSTRAR MÁS

Otros transistores... SGT40N60FD2P7 , SGT40N60NPFDPN , SGT50T65FD1PN , SGT50T65FD1P7 , SGT50T65FD1PS , SGT50T65FD1PT , SGTP5T60SD1D , SGTP5T60SD1F , GT30F126 , AU40N120T3A2 , LGM100HF120S2F1A , LGM400HF65S4T1A , YGF15N65T2 , YGK15N65T2 , YGP15N65T2 , YGF20N65T2 , YGK20N65T2 .

History: STGWT60H60DLFB

 

 
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