YGW25N135F1A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: YGW25N135F1A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 260
Tensión máxima colector-emisor |Vce|, V: 1350
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 50
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2
Temperatura máxima de unión (Tj), ℃: 150
Capacitancia de salida (Cc), typ, pF: 70
Paquete / Cubierta: TO247
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YGW25N135F1A Datasheet (PDF)
ygw25n135f1a.pdf
YGW25N135F1A 1350V /25A Trench Field Stop IGBT Lu-semi Field Stop Trench IGBTs offer low V 1350 V CEswitching losses, high energy efficiency and I 25 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =25A 2.0 V CE(SAT) Cmicrowave oven, etc. FEATURES High breakdown voltage to 1350V for improved reliability Trench-S
ygw25n120f1a1.pdf
YGW25N120F1A1 1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V for V 1200 V CEimproved reliability I 25 A C Trench-Stop Technology offering : High speed switching V I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V CEsat
ygw25n120u2.pdf
YGW25N120U2 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A Cimproved reliability V I =25A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low V CEsat Easy parallel switching capability du
ygw25n120t1.pdf
YGW25N120T1 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A Cimproved reliability V I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10s Low V CE(SAT) Easy parall
Otros transistores... YGW20N65T2 , YGQ100N65FP , YGW10N120T3 , YGW15N120F1A , YGW15N120T3 , YGW25N120F1A1 , YGW25N120T1 , YGW25N120U2 , YGW40N65F1 , YGW40N120F2 , YGW40N120T2 , YGW40N120T3 , YGW40N65F1A1 , YGW40N65F1A2 , YGW50N120FP , YGW50N65F1A , YGW50N65T1 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ