All IGBT. YGW25N135F1A Datasheet

 

YGW25N135F1A IGBT. Datasheet pdf. Equivalent


   Type Designator: YGW25N135F1A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 260 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 70 pF
   Qgⓘ - Total Gate Charge, typ: 135 nC
   Package: TO247

 YGW25N135F1A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

YGW25N135F1A Datasheet (PDF)

 ..1. Size:602K  cn luxin semi
 ygw25n135f1a.pdf

YGW25N135F1A YGW25N135F1A

YGW25N135F1A 1350V /25A Trench Field Stop IGBT Lu-semi Field Stop Trench IGBTs offer low V 1350 V CEswitching losses, high energy efficiency and I 25 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =25A 2.0 V CE(SAT) Cmicrowave oven, etc. FEATURES High breakdown voltage to 1350V for improved reliability Trench-S

 7.1. Size:481K  cn luxin semi
 ygw25n120f1a1.pdf

YGW25N135F1A YGW25N135F1A

YGW25N120F1A1 1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V for V 1200 V CEimproved reliability I 25 A C Trench-Stop Technology offering : High speed switching V I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V CEsat

 7.2. Size:428K  cn luxin semi
 ygw25n120u2.pdf

YGW25N135F1A YGW25N135F1A

YGW25N120U2 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A Cimproved reliability V I =25A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low V CEsat Easy parallel switching capability du

 7.3. Size:563K  cn luxin semi
 ygw25n120t1.pdf

YGW25N135F1A YGW25N135F1A

YGW25N120T1 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A Cimproved reliability V I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10s Low V CE(SAT) Easy parall

Datasheet: YGW20N65T2 , YGQ100N65FP , YGW10N120T3 , YGW15N120F1A , YGW15N120T3 , YGW25N120F1A1 , YGW25N120T1 , YGW25N120U2 , SGT40N60FD2PN , YGW40N120F2 , YGW40N120T2 , YGW40N120T3 , YGW40N65F1A1 , YGW40N65F1A2 , YGW50N120FP , YGW50N65F1A , YGW50N65T1 .

 

 
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