YGW40N65F1A1 Todos los transistores

 

YGW40N65F1A1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: YGW40N65F1A1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 188 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 80 nS
   Coesⓘ - Capacitancia de salida, typ: 100 pF
   Paquete / Cubierta: TO247
 

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YGW40N65F1A1 Datasheet (PDF)

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 ygw40n65f1a1.pdf pdf_icon

YGW40N65F1A1

YGW40N65F1A1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 3.1. Size:412K  cn luxin semi
 ygw40n65f1a2.pdf pdf_icon

YGW40N65F1A1

YGW40N65F1A2 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 4.1. Size:599K  1
 ygw40n65f1.pdf pdf_icon

YGW40N65F1A1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

 4.2. Size:412K  cn luxin semi
 ygw40n65f1.pdf pdf_icon

YGW40N65F1A1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

MOSTRAR MÁS

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: SIGC04T60GS | XD040Q120AT1S3 | IKFW40N60DH3E | IKB40N65EH5 | 2MBI200NB-120 | OST50N65HMF | IGC142T120T8RL

 

 
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