YGW40N65F1A1 PDF and Equivalents Search

 

YGW40N65F1A1 Specs and Replacement


   Type Designator: YGW40N65F1A1
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 188 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   tr ⓘ - Rise Time, typ: 80 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Package: TO247
 

 YGW40N65F1A1 Substitution

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YGW40N65F1A1 datasheet

 ..1. Size:412K  cn luxin semi
 ygw40n65f1a1.pdf pdf_icon

YGW40N65F1A1

YGW40N65F1A1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in ... See More ⇒

 3.1. Size:412K  cn luxin semi
 ygw40n65f1a2.pdf pdf_icon

YGW40N65F1A1

YGW40N65F1A2 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in ... See More ⇒

 4.1. Size:599K  1
 ygw40n65f1.pdf pdf_icon

YGW40N65F1A1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V ... See More ⇒

 4.2. Size:412K  cn luxin semi
 ygw40n65f1.pdf pdf_icon

YGW40N65F1A1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V ... See More ⇒

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Specs: YGW15N120T3 , YGW25N120F1A1 , YGW25N120T1 , YGW25N120U2 , YGW25N135F1A , YGW40N120F2 , YGW40N120T2 , YGW40N120T3 , NGD8201N , YGW40N65F1A2 , YGW50N120FP , YGW50N65F1A , YGW50N65T1 , YGW60N65F1A2 , YGW60N65T1 , YGW75N65F1 , YGW75N65FP .

Keywords - YGW40N65F1A1 transistor spec

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