YGW40N65F1A1 Datasheet. Specs and Replacement

Type Designator: YGW40N65F1A1  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 188 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 80 nS

Coesⓘ - Output Capacitance, typ: 100 pF

Package: TO247

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YGW40N65F1A1 datasheet

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YGW40N65F1A1

YGW40N65F1A1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in ... See More ⇒

 3.1. Size:412K  cn luxin semi
 ygw40n65f1a2.pdf pdf_icon

YGW40N65F1A1

YGW40N65F1A2 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in ... See More ⇒

 4.1. Size:599K  1
 ygw40n65f1.pdf pdf_icon

YGW40N65F1A1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V ... See More ⇒

 4.2. Size:412K  cn luxin semi
 ygw40n65f1.pdf pdf_icon

YGW40N65F1A1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V ... See More ⇒

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Specs: YGW15N120T3, YGW25N120F1A1, YGW25N120T1, YGW25N120U2, YGW25N135F1A, YGW40N120F2, YGW40N120T2, YGW40N120T3, YGW60N65F1A2, YGW40N65F1A2, YGW50N120FP, YGW50N65F1A, YGW50N65T1, YGW60N65F1A2, YGW60N65T1, YGW75N65F1, YGW75N65FP

Keywords - YGW40N65F1A1 transistor spec

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