All IGBT. YGW40N65F1A1 Datasheet

 

YGW40N65F1A1 IGBT. Datasheet pdf. Equivalent


   Type Designator: YGW40N65F1A1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 188
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.6
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 80
   Collector Capacity (Cc), typ, pF: 100
   Total Gate Charge (Qg), typ, nC: 90
   Package: TO247

 YGW40N65F1A1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

YGW40N65F1A1 Datasheet (PDF)

 ..1. Size:412K  cn luxin semi
 ygw40n65f1a1.pdf

YGW40N65F1A1 YGW40N65F1A1

YGW40N65F1A1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 3.1. Size:412K  cn luxin semi
 ygw40n65f1a2.pdf

YGW40N65F1A1 YGW40N65F1A1

YGW40N65F1A2 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 4.1. Size:599K  1
 ygw40n65f1.pdf

YGW40N65F1A1 YGW40N65F1A1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

 4.2. Size:412K  cn luxin semi
 ygw40n65f1.pdf

YGW40N65F1A1 YGW40N65F1A1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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