YGW60N65F1A2 Todos los transistores

 

YGW60N65F1A2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: YGW60N65F1A2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 312 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 79 nS

Coesⓘ - Capacitancia de salida, typ: 130 pF

Encapsulados: TO247

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YGW60N65F1A2 datasheet

 ..1. Size:433K  cn luxin semi
 ygw60n65f1a2.pdf pdf_icon

YGW60N65F1A2

YGW60N65F1A2 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A C improved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 3.1. Size:522K  1
 ygw60n65f1a1.pdf pdf_icon

YGW60N65F1A2

YGW60N65F1A1 650V /60A Trench Field Stop IGBT Lu-Semi 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 60 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology of

 3.2. Size:422K  cn luxin semi
 ygw60n65f1a1.pdf pdf_icon

YGW60N65F1A2

YGW60N65F1A1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A C improved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 6.1. Size:406K  cn luxin semi
 ygw60n65t1.pdf pdf_icon

YGW60N65F1A2

YGW60N65T1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A C improved reliability V I =60A 1.85 V Trench-Stop Technology offering CE(SAT) C High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

MOSTRAR MÁS

Otros transistores... YGW40N120F2 , YGW40N120T2 , YGW40N120T3 , YGW40N65F1A1 , YGW40N65F1A2 , YGW50N120FP , YGW50N65F1A , YGW50N65T1 , YGW40N65F1 , YGW60N65T1 , YGW75N65F1 , YGW75N65FP , YGW75N65HP , YGW75N65T1 , NCE07T60BI , NCE07TD60BF , NCE07TD60BD .

History: SII75N06 | TGAN25N120FDR | SPT60N65F1A1 | VS-GB55NA120UX | TT030N065EI | SII150N06 | VS-GB600AH120N

 

 

 

 

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