YGW60N65F1A2 Specs and Replacement
Type Designator: YGW60N65F1A2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 312 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
tr ⓘ - Rise Time, typ: 79 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Package: TO247
YGW60N65F1A2 Substitution - IGBT ⓘ Cross-Reference Search
YGW60N65F1A2 datasheet
ygw60n65f1a2.pdf
YGW60N65F1A2 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A C improved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in ... See More ⇒
ygw60n65f1a1.pdf
YGW60N65F1A1 650V /60A Trench Field Stop IGBT Lu-Semi 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 60 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology of... See More ⇒
ygw60n65f1a1.pdf
YGW60N65F1A1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A C improved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in ... See More ⇒
ygw60n65t1.pdf
YGW60N65T1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A C improved reliability V I =60A 1.85 V Trench-Stop Technology offering CE(SAT) C High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V ... See More ⇒
Specs: YGW40N120F2 , YGW40N120T2 , YGW40N120T3 , YGW40N65F1A1 , YGW40N65F1A2 , YGW50N120FP , YGW50N65F1A , YGW50N65T1 , YGW40N65F1 , YGW60N65T1 , YGW75N65F1 , YGW75N65FP , YGW75N65HP , YGW75N65T1 , NCE07T60BI , NCE07TD60BF , NCE07TD60BD .
History: TGAN25N120FDR
Keywords - YGW60N65F1A2 transistor spec
YGW60N65F1A2 cross reference
YGW60N65F1A2 equivalent finder
YGW60N65F1A2 lookup
YGW60N65F1A2 substitution
YGW60N65F1A2 replacement
History: TGAN25N120FDR
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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