All IGBT. YGW60N65F1A2 Datasheet

 

YGW60N65F1A2 IGBT. Datasheet pdf. Equivalent


   Type Designator: YGW60N65F1A2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 312 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 79 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Qgⓘ - Total Gate Charge, typ: 158 nC
   Package: TO247

 YGW60N65F1A2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

YGW60N65F1A2 Datasheet (PDF)

 ..1. Size:433K  cn luxin semi
 ygw60n65f1a2.pdf

YGW60N65F1A2 YGW60N65F1A2

YGW60N65F1A2 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 3.1. Size:522K  1
 ygw60n65f1a1.pdf

YGW60N65F1A2 YGW60N65F1A2

YGW60N65F1A1 650V /60A Trench Field Stop IGBT Lu-Semi 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 60 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology of

 3.2. Size:422K  cn luxin semi
 ygw60n65f1a1.pdf

YGW60N65F1A2 YGW60N65F1A2

YGW60N65F1A1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 6.1. Size:406K  cn luxin semi
 ygw60n65t1.pdf

YGW60N65F1A2 YGW60N65F1A2

YGW60N65T1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V Trench-Stop Technology offering : CE(SAT) C High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

Datasheet: YGW40N120F2 , YGW40N120T2 , YGW40N120T3 , YGW40N65F1A1 , YGW40N65F1A2 , YGW50N120FP , YGW50N65F1A , YGW50N65T1 , SGT60N60FD1P7 , YGW60N65T1 , YGW75N65F1 , YGW75N65FP , YGW75N65HP , YGW75N65T1 , NCE07T60BI , NCE07TD60BF , NCE07TD60BD .

 

 
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