All IGBT. YGW60N65F1A2 Datasheet

 

YGW60N65F1A2 IGBT. Datasheet pdf. Equivalent


   Type Designator: YGW60N65F1A2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 312
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 120
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 79
   Collector Capacity (Cc), typ, pF: 130
   Total Gate Charge (Qg), typ, nC: 158
   Package: TO247

 YGW60N65F1A2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

YGW60N65F1A2 Datasheet (PDF)

 ..1. Size:433K  cn luxin semi
 ygw60n65f1a2.pdf

YGW60N65F1A2 YGW60N65F1A2

YGW60N65F1A2 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 3.1. Size:522K  1
 ygw60n65f1a1.pdf

YGW60N65F1A2 YGW60N65F1A2

YGW60N65F1A1 650V /60A Trench Field Stop IGBT Lu-Semi 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 60 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology of

 3.2. Size:422K  cn luxin semi
 ygw60n65f1a1.pdf

YGW60N65F1A2 YGW60N65F1A2

YGW60N65F1A1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 6.1. Size:406K  cn luxin semi
 ygw60n65t1.pdf

YGW60N65F1A2 YGW60N65F1A2

YGW60N65T1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V Trench-Stop Technology offering : CE(SAT) C High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

Datasheet: YGW40N120F2 , YGW40N120T2 , YGW40N120T3 , YGW40N65F1A1 , YGW40N65F1A2 , YGW50N120FP , YGW50N65F1A , YGW50N65T1 , TGPF30N40P , YGW60N65T1 , YGW75N65F1 , YGW75N65FP , YGW75N65HP , YGW75N65T1 , NCE07T60BI , NCE07TD60BF , NCE07TD60BD .

 

 
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