YGW75N65F1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: YGW75N65F1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.2 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 40 nS
Coesⓘ - Capacitancia de salida, typ: 200 pF
Qgⓘ - Carga total de la puerta, typ: 260 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de YGW75N65F1 - IGBT
YGW75N65F1 Datasheet (PDF)
ygw75n65f1.pdf
YGW75N65F1 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.7 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due
ygw75n65fp.pdf
YGW75N65FP 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due
ygw75n65hp.pdf
Preliminary YGW75N65HP 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.65 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching c
ygw75n65t1.pdf
YGW75N65T1 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.7 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2