YGW75N65HP Todos los transistores

 

YGW75N65HP IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: YGW75N65HP

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 375 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 120 nS

Coesⓘ - Capacitancia de salida, typ: 430 pF

Encapsulados: TO247

 Búsqueda de reemplazo de YGW75N65HP IGBT

- Selección ⓘ de transistores por parámetros

 

YGW75N65HP datasheet

 ..1. Size:253K  cn luxin semi
 ygw75n65hp.pdf pdf_icon

YGW75N65HP

Preliminary YGW75N65HP 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A C improved reliability V I =75A 1.65 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 5 s Low V CEsat Easy parallel switching c

 6.1. Size:422K  cn luxin semi
 ygw75n65f1.pdf pdf_icon

YGW75N65HP

YGW75N65F1 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A C improved reliability V I =75A 1.7 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 5 s Low V CEsat Easy parallel switching capability due

 6.2. Size:411K  cn luxin semi
 ygw75n65fp.pdf pdf_icon

YGW75N65HP

YGW75N65FP 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A C improved reliability V I =75A 1.8 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 5 s Low V CEsat Easy parallel switching capability due

 6.3. Size:422K  cn luxin semi
 ygw75n65t1.pdf pdf_icon

YGW75N65HP

YGW75N65T1 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A C improved reliability V I =75A 1.7 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 5 s Low V CEsat Easy parallel switching capability due

MOSTRAR MÁS

Otros transistores... YGW40N65F1A2 , YGW50N120FP , YGW50N65F1A , YGW50N65T1 , YGW60N65F1A2 , YGW60N65T1 , YGW75N65F1 , YGW75N65FP , IKW50N60H3 , YGW75N65T1 , NCE07T60BI , NCE07TD60BF , NCE07TD60BD , NCE07TD60B , NCE07TD60BI , NCE07TD60BK , NCE10TD60BF .

History: XP035PJE120AT1B2 | TGAN40N120F2DW | STGB19NC60W | SRE30N065FSUDG | STGWT40H65DFB | SGP15N60RUF

 

 

 

 

↑ Back to Top
.