All IGBT. YGW75N65HP Datasheet

 

YGW75N65HP IGBT. Datasheet pdf. Equivalent


   Type Designator: YGW75N65HP
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 375
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 150
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.2
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 120
   Collector Capacity (Cc), typ, pF: 430
   Total Gate Charge (Qg), typ, nC: 145
   Package: TO247

 YGW75N65HP Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

YGW75N65HP Datasheet (PDF)

 ..1. Size:253K  cn luxin semi
 ygw75n65hp.pdf

YGW75N65HP YGW75N65HP

Preliminary YGW75N65HP 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.65 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching c

 6.1. Size:422K  cn luxin semi
 ygw75n65f1.pdf

YGW75N65HP YGW75N65HP

YGW75N65F1 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.7 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due

 6.2. Size:411K  cn luxin semi
 ygw75n65fp.pdf

YGW75N65HP YGW75N65HP

YGW75N65FP 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due

 6.3. Size:422K  cn luxin semi
 ygw75n65t1.pdf

YGW75N65HP YGW75N65HP

YGW75N65T1 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.7 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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