NCE10TD60BF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE10TD60BF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 33 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 40 pF
Encapsulados: TO220F
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NCE10TD60BF datasheet
nce10td60bk.pdf
PbFreeProduct NCE10TD60BK 600V, 10A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed s
nce10td60bd.pdf
Pb Free Product NCE10TD60BD 600V, 10A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
Otros transistores... YGW75N65HP , YGW75N65T1 , NCE07T60BI , NCE07TD60BF , NCE07TD60BD , NCE07TD60B , NCE07TD60BI , NCE07TD60BK , FGH75T65UPD , NCE10TD60BD , NCE10TD60B , NCE10TD60BK , NCE15TD120BT , NCE20TD60BD , NCE20TD60B , NCE20TD60BF , NCE20TH60BP .
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