Справочник IGBT. NCE10TD60BF

 

NCE10TD60BF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NCE10TD60BF
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 33
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 20
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.7
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 15
   Емкость коллектора типовая (Cc), pf: 40
   Общий заряд затвора (Qg), typ, nC: 44
   Тип корпуса: TO220F

 Аналог (замена) для NCE10TD60BF

 

 

NCE10TD60BF Datasheet (PDF)

 ..1. Size:677K  ncepower
 nce10td60bf nce10td60bd nce10td60b.pdf

NCE10TD60BF NCE10TD60BF

PbFreeProduct NCE10TD60BF,NCE10TD60BD,NCE10TD60B 600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 4.1. Size:606K  ncepower
 nce10td60bk.pdf

NCE10TD60BF NCE10TD60BF

PbFreeProduct NCE10TD60BK 600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed s

 9.1. Size:281K  ncepower
 nce1013e.pdf

NCE10TD60BF NCE10TD60BF

http://www.ncepower.com NCE1013ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE1013E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V,ID =-0.66A RDS(ON)

 9.2. Size:694K  ncepower
 nce1012e.pdf

NCE10TD60BF NCE10TD60BF

http://www.ncepower.comNCE1012ENCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE1012E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 1.8V. This device is suitable for use as aBattery protection or in other Switching application.General Features V = 20V,I =0.6ADS DSchematic diagramR

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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