NCE10TD60B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE10TD60B
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 83
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 30
Colector de Corriente Continua a 25℃ |Ic|, A: 20
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.7
Tensión máxima de puerta-umbral |VGE(th)|, V: 6
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 15
Capacitancia de salida (Cc), typ, pF: 40
Carga total de la puerta (Qg), typ, nC: 44
Paquete / Cubierta: TO220
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NCE10TD60B Datasheet (PDF)
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nce10td60bk.pdf
PbFreeProduct NCE10TD60BK 600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed s
nce1013e.pdf
http://www.ncepower.com NCE1013ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE1013E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V,ID =-0.66A RDS(ON)
nce1012e.pdf
http://www.ncepower.comNCE1012ENCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE1012E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 1.8V. This device is suitable for use as aBattery protection or in other Switching application.General Features V = 20V,I =0.6ADS DSchematic diagramR
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ