NCE10TD60B Specs and Replacement
Type Designator: NCE10TD60B
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 83 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 40 pF
Package: TO220
NCE10TD60B Substitution - IGBT ⓘ Cross-Reference Search
NCE10TD60B datasheet
nce10td60bk.pdf
PbFreeProduct NCE10TD60BK 600V, 10A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed s... See More ⇒
nce10td60bd.pdf
Pb Free Product NCE10TD60BD 600V, 10A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching ... See More ⇒
Specs: NCE07T60BI , NCE07TD60BF , NCE07TD60BD , NCE07TD60B , NCE07TD60BI , NCE07TD60BK , NCE10TD60BF , NCE10TD60BD , TGAN60N60F2DS , NCE10TD60BK , NCE15TD120BT , NCE20TD60BD , NCE20TD60B , NCE20TD60BF , NCE20TH60BP , NCE25GD135T , NCE25TD120BT .
Keywords - NCE10TD60B transistor spec
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