NCE25GD135T IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE25GD135T
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 312 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
Tjⓘ -
Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2 V @25℃
trⓘ - Tiempo de subida, typ: 60 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Encapsulados: TO247
Búsqueda de reemplazo de NCE25GD135T IGBT
- Selección ⓘ de transistores por parámetros
NCE25GD135T datasheet
..1. Size:317K ncepower
nce25gd135t.pdf 

Pb Free Product NCE25GD135T http //www.ncepower.com NCE25GD135T 1350V, 25A, Trench NPT IGBT Features Trench NPT( Non Punch Through) IGBT High speed switching Low saturation voltage VCE(sat)=2.0V@IC=25A High input impedance Applications Inductive heating, Microwave oven, Inverter, UPS, etc. Soft switching applications General Description Using advanced Tre
9.1. Size:382K ncepower
nce25td120lp.pdf 

PbFreeProduct NCE25TD120LP 1200V, 25A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
9.3. Size:1474K ncepower
nce25td120wt.pdf 

Pb Free Product NCE25TD120WT 1200V, 25A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
9.4. Size:356K ncepower
nce25td135lt.pdf 

PbFreeProduct NCE25TD135LT 1350V, 25A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
9.5. Size:1324K ncepower
nce25td120bd.pdf 

Pb Free Product NCE25TD120BD 1200V, 25A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
9.6. Size:1687K ncepower
nce25tc120hd.pdf 

Pb Free Product NCE25TC120HD 1200V, 25A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
9.7. Size:356K ncepower
nce25td120lt.pdf 

PbFreeProduct NCE25TD120LT 1200V, 25A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
9.8. Size:357K ncepower
nce25td120bt.pdf 

PbFreeProduct NCE25TD120BT 1200V, 25A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
9.9. Size:747K ncepower
nce25p60k.pdf 

NCE25P60K http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE25P60K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features V =-60V,I =-50A DS D R
9.10. Size:383K ncepower
nce25td135lp.pdf 

PbFreeProduct NCE25TD135LP 1350V, 25A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
9.11. Size:1476K ncepower
nce25td120vtp.pdf 

Pb Free Product NCE25TD120VTP 1200V, 25A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
9.12. Size:1385K ncepower
nce25td120vd.pdf 

Pb Free Product NCE25TD120VD 1200V, 25A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
9.13. Size:1458K ncepower
nce25td120vt.pdf 

Pb Free Product NCE25TD120VT 1200V, 25A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
Otros transistores... NCE10TD60BD
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.
History: STGFW20H65FB