NCE25GD135T IGBT. Datasheet pdf. Equivalent
Type Designator: NCE25GD135T
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 312
Maximum Collector-Emitter Voltage |Vce|, V: 1350
Maximum Gate-Emitter Voltage |Vge|, V: 30
Maximum Collector Current |Ic| @25℃, A: 50
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 60
Collector Capacity (Cc), typ, pF: 130
Total Gate Charge (Qg), typ, nC: 200
Package: TO247
NCE25GD135T Transistor Equivalent Substitute - IGBT Cross-Reference Search
NCE25GD135T Datasheet (PDF)
nce25gd135t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Pb Free ProductNCE25GD135T http://www.ncepower.com NCE25GD135T 1350V, 25A, Trench NPT IGBT Features Trench NPT( Non Punch Through) IGBT High speed switching Low saturation voltage: VCE(sat)=2.0V@IC=25A High input impedance Applications Inductive heating, Microwave oven, Inverter, UPS, etc. Soft switching applications General Description Using advanced Tre
nce25td135lt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PbFreeProduct NCE25TD135LT 1350V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25td120lt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PbFreeProduct NCE25TD120LT 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25td120bt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PbFreeProduct NCE25TD120BT 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25p60k.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCE25P60Khttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE25P60K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for use as a load switch or in PWMapplications.Schematic diagramGeneral Features V =-60V,I =-50ADS DR
Datasheet: NCE10TD60BD , NCE10TD60B , NCE10TD60BK , NCE15TD120BT , NCE20TD60BD , NCE20TD60B , NCE20TD60BF , NCE20TH60BP , IXGH60N60C2 , NCE25TD120BT , NCE25TD120LT , NCE25TD135LT , NCE30TD120UT , NCE30TD60B , NCE30TD60BF , NCE30TD60BD , NCE30TD60BP .
![NCE25GD135T](https://alltransistors.com/images/us.png)
![NCE25GD135T](https://alltransistors.com/images/es.png)
![NCE25GD135T](https://alltransistors.com/images/ru.png)
LIST
Last Update
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ