NCE30TD60BF Todos los transistores

 

NCE30TD60BF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE30TD60BF
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 35.5 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 17 nS
   Coesⓘ - Capacitancia de salida, typ: 106 pF
   Qgⓘ - Carga total de la puerta, typ: 132 nC
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de NCE30TD60BF IGBT

   - Selección ⓘ de transistores por parámetros

 

NCE30TD60BF Datasheet (PDF)

 ..1. Size:1194K  ncepower
 nce30td60bf.pdf pdf_icon

NCE30TD60BF

Pb Free ProductNCE30TD60BF600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 ..2. Size:701K  ncepower
 nce30td60b nce30td60bf.pdf pdf_icon

NCE30TD60BF

PbFreeProduct NCE30TD60B,NCE30TD60BF 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat Hi

 4.1. Size:1027K  ncepower
 nce30td60bp.pdf pdf_icon

NCE30TD60BF

Pb Free ProductNCE30TD60BP600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 4.2. Size:658K  ncepower
 nce30td60bd.pdf pdf_icon

NCE30TD60BF

PbFreeProduct NCE30TD60BD 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed

MOSTRAR MÁS

Otros transistores... NCE20TD60BF , NCE20TH60BP , NCE25GD135T , NCE25TD120BT , NCE25TD120LT , NCE25TD135LT , NCE30TD120UT , NCE30TD60B , SGT60U65FD1PT , NCE30TD60BD , NCE30TD60BP , NCE30TD60BT , NCE30TH60BP , NCE40TD120BT , NCE40TD120VT , NCE40TD120VTP , NCE40TD120WT .

 

 
Back to Top

 


 
.