NCE30TD60BF Specs and Replacement
Type Designator: NCE30TD60BF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 35.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 17 nS
Coesⓘ - Output Capacitance, typ: 106 pF
Package: TO220F
NCE30TD60BF Substitution - IGBTⓘ Cross-Reference Search
NCE30TD60BF datasheet
nce30td60b nce30td60bf.pdf
PbFreeProduct NCE30TD60B,NCE30TD60BF 600V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat Hi... See More ⇒
nce30td60bd.pdf
PbFreeProduct NCE30TD60BD 600V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed ... See More ⇒
Specs: NCE20TD60BF, NCE20TH60BP, NCE25GD135T, NCE25TD120BT, NCE25TD120LT, NCE25TD135LT, NCE30TD120UT, NCE30TD60B, MBQ40T65FDSC, NCE30TD60BD, NCE30TD60BP, NCE30TD60BT, NCE30TH60BP, NCE40TD120BT, NCE40TD120VT, NCE40TD120VTP, NCE40TD120WT
Keywords - NCE30TD60BF transistor spec
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