STGB14NC60KDT4 Todos los transistores

 

STGB14NC60KDT4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGB14NC60KDT4
   Tipo de transistor: IGBT + Diode
   Código de marcado: GB14NC60KD
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 80
   Tensión máxima colector-emisor |Vce|, V: 600
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 25
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.1
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 8.5
   Capacitancia de salida (Cc), typ, pF: 86
   Carga total de la puerta (Qg), typ, nC: 34.4
   Paquete / Cubierta: D2PAK

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STGB14NC60KDT4 Datasheet (PDF)

 ..1. Size:1461K  st
stgb14nc60kdt4 stgf14nc60kd stgp14nc60kd.pdf

STGB14NC60KDT4 STGB14NC60KDT4

STGB14NC60KDT4, STGF14NC60KD, STGP14NC60KD 14 A, 600 V short-circuit rugged IGBT Datasheet - production data Features TAB Low on voltage drop (V ) CE(sat) Low C / C ratio (no cross-conduction res ies31susceptibility) D2 PAK3 Very soft ultrafast recovery antiparallel diode 21 Short-circuit withstand time 10 s TO-220FPTABApplications H

 2.1. Size:537K  st
stgb14nc60kd stgf14nc60kd stgp14nc60kd.pdf

STGB14NC60KDT4 STGB14NC60KDT4

STGB14NC60KDSTGF14NC60KD, STGP14NC60KD14 A, 600 V - short-circuit rugged IGBTFeaturesTAB TAB2 Short circuit withstand time 10s. Low on-voltage drop (VCE(sat))3 Low Cres / Cies ratio (no cross conduction 3121susceptibility)DPAKTO-220 Switching losses include diode recovery energy Very soft ultra fast recovery antiparallel diode321App

 2.2. Size:540K  st
stgb14nc60kd.pdf

STGB14NC60KDT4 STGB14NC60KDT4

STGB14NC60KDSTGF14NC60KD, STGP14NC60KD14 A, 600 V - short-circuit rugged IGBTFeaturesTAB TAB2 Short circuit withstand time 10s. Low on-voltage drop (VCE(sat))3 Low Cres / Cies ratio (no cross conduction 3121susceptibility)DPAKTO-220 Switching losses include diode recovery energy Very soft ultra fast recovery antiparallel diode321App

 3.1. Size:439K  st
stgb14nc60k stgd14nc60k.pdf

STGB14NC60KDT4 STGB14NC60KDT4

STGB14NC60KSTGD14NC60KN-channel 14A - 600V -DPAK - D2PAKShort circuit rated PowerMESH IGBTGeneral featuresIC VCE(sat) Type VCES(Max)@ 25C @100CSTGB14NC60K 600V

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

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History: SRE80N065FSU2

STGB14NC60KDT4
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