STGB30H60DFB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGB30H60DFB
Tipo de transistor: IGBT + Diode
Código de marcado: GB30H60DFB
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 260
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 60
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.55
Tensión máxima de puerta-umbral |VGE(th)|, V: 7
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 14.6
Capacitancia de salida (Cc), typ, pF: 101
Carga total de la puerta (Qg), typ, nC: 149
Paquete / Cubierta: D2PAK
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STGB30H60DFB Datasheet (PDF)
stgb30h60dfb stgp30h60dfb.pdf
STGB30H60DFB, STGP30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 CTABTAB High speed switching series Minimized tail current3 Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A132D PAK TO-220 2 Tight parameter distribution1 Safe paralleling Positive V
stgb30h60df.pdf
STGB30H60DFSTGP30H60DF30 A, 600 V field stop trench gate IGBT with Ultrafast diodeTarget specificationFeatures Very high speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time 3 3211 Ultrafast soft recovery antiparallel diodeTO-220Applications DPAK Motor controlDescription
stgb30h60df stgf30h60df stgp30h60df stgw30h60df.pdf
STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I
stgb30h60dlfb stgw30h60dlfb.pdf
STGB30H60DLFB, STGW30H60DLFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current313 VCE(sat) = 1.55 V (typ.) @ IC = 30 A2D2PAK 1 Low VF soft recovery co-packaged diodeT
stgb30h60dlfb.pdf
STGB30H60DLFB, STGW30H60DLFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current313 VCE(sat) = 1.55 V (typ.) @ IC = 30 A2D2PAK 1 Low VF soft recovery co-packaged diodeT
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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