STGB30H60DFB Todos los transistores

 

STGB30H60DFB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGB30H60DFB
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 260 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 14.6 nS
   Coesⓘ - Capacitancia de salida, typ: 101 pF
   Paquete / Cubierta: D2PAK
 

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STGB30H60DFB Datasheet (PDF)

 ..1. Size:798K  st
stgb30h60dfb stgp30h60dfb.pdf pdf_icon

STGB30H60DFB

STGB30H60DFB, STGP30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 CTABTAB High speed switching series Minimized tail current3 Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A132D PAK TO-220 2 Tight parameter distribution1 Safe paralleling Positive V

 3.1. Size:633K  st
stgb30h60df.pdf pdf_icon

STGB30H60DFB

STGB30H60DFSTGP30H60DF30 A, 600 V field stop trench gate IGBT with Ultrafast diodeTarget specificationFeatures Very high speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time 3 3211 Ultrafast soft recovery antiparallel diodeTO-220Applications DPAK Motor controlDescription

 3.2. Size:1944K  st
stgb30h60df stgf30h60df stgp30h60df stgw30h60df.pdf pdf_icon

STGB30H60DFB

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

 4.1. Size:1739K  st
stgb30h60dlfb stgw30h60dlfb.pdf pdf_icon

STGB30H60DFB

STGB30H60DLFB, STGW30H60DLFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current313 VCE(sat) = 1.55 V (typ.) @ IC = 30 A2D2PAK 1 Low VF soft recovery co-packaged diodeT

Otros transistores... STGB10NC60KDT4 , STGD10NC60KDT4 , STGB14NC60KDT4 , STGB15M65DF2 , STGB19NC60HDT4 , STGB19NC60KDT4 , STGB20H65DFB2 , STGB20M65DF2 , GT50JR22 , STGP30H60DFB , STGB3HF60HD , STGD3HF60HDT4 , STGF3HF60HD , STGP3HF60HD , STGB40H65FB , STGB5H60DF , STGD5H60DF .

History: IXXX110N65B4H1 | SGP5N60RUF

 

 
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History: IXXX110N65B4H1 | SGP5N60RUF

STGB30H60DFB
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