STGB30H60DFB - параметры транзистора, его аналоги, Даташиты

STGB30H60DFB Datasheet (PDF)

..1. Size:798K st
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STGB30H60DFB, STGP30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 CTABTAB High speed switching series Minimized tail current3 Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A132D PAK TO-220 2 Tight parameter distribution1 Safe paralleling Positive V

3.1. Size:633K st
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STGB30H60DFSTGP30H60DF30 A, 600 V field stop trench gate IGBT with Ultrafast diodeTarget specificationFeatures Very high speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time 3 3211 Ultrafast soft recovery antiparallel diodeTO-220Applications DPAK Motor controlDescription

3.2. Size:1944K st
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STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

4.1. Size:1739K st
stgb30h60dlfb stgw30h60dlfb.pdf pdf_icon

STGB30H60DLFB, STGW30H60DLFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current313 VCE(sat) = 1.55 V (typ.) @ IC = 30 A2D2PAK 1 Low VF soft recovery co-packaged diodeT