STGP3HF60HD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGP3HF60HD  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 38 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 7.5 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.45 V @25℃

trⓘ - Tiempo de subida, typ: 4 nS

Coesⓘ - Capacitancia de salida, typ: 14 pF

Encapsulados: TO220

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STGP3HF60HD datasheet

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stgb3hf60hd stgd3hf60hdt4 stgf3hf60hd stgp3hf60hd.pdf pdf_icon

STGP3HF60HD

STGB3HF60HD, STGD3HF60HDT4, STGF3HF60HD, STGP3HF60HD 4.5 A, 600 V very fast IGBT with Ultrafast diode Datasheet - production data Features Minimal tail current Low conduction and switching losses Ultrafast soft recovery antiparallel diode Applications Motor drive Description These devices are based on a new advanced planar technology concept to yield an I

 9.1. Size:657K  st
stgf30nc60s stgp30nc60s stgwf30nc60s.pdf pdf_icon

STGP3HF60HD

STGF30NC60S STGP30NC60S, STGWF30NC60S 30 A, 600 V, fast IGBT Features TAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) 3 3 2 High current capability 2 1 1 TO-220 TO-220FP Application 1 1 1 3 Motor drive 2 1 TO-3PF Description This device utilizes the advanced PowerMESHTM process result

 9.2. Size:741K  st
stgb35n35lz stgp35n35lz.pdf pdf_icon

STGP3HF60HD

STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V, internally clamped IGBT Features TAB Low threshold voltage TAB Low on-voltage drop High voltage clamping feature 3 1 Gate and gate-emitter integrated resistors TAB D PAK 3 2 1 I PAK Application Automotive ignition 3 2 1 TO-220 Description This application specific IGBT utilizes the most advanced PowerMES

 9.3. Size:1911K  st
stgb30v60df stgp30v60df stgw30v60df stgwt30v60df.pdf pdf_icon

STGP3HF60HD

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB Features TAB Maximum junction temperature TJ = 175 C Tail-less switching off 3 3 2 1 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 D PAK TO-220 Tight parameters distribution TAB Safe paralleling Low therma

Otros transistores... STGB19NC60KDT4, STGB20H65DFB2, STGB20M65DF2, STGB30H60DFB, STGP30H60DFB, STGB3HF60HD, STGD3HF60HDT4, STGF3HF60HD, IXGH60N60, STGB40H65FB, STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF, STGB6NC60HDT4, STGD4M65DF2, STGD6M65DF2