Справочник IGBT. STGP3HF60HD

 

STGP3HF60HD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: STGP3HF60HD
   Тип транзистора: IGBT + Diode
   Маркировка: GP3HF60HD
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 38 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 7.5 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.45 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.75 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 4 nS
   Coesⓘ - Выходная емкость, типовая: 14 pF
   Qgⓘ - Общий заряд затвора, typ: 12 nC
   Тип корпуса: TO220

 Аналог (замена) для STGP3HF60HD

 

 

STGP3HF60HD Datasheet (PDF)

 ..1. Size:1321K  st
stgb3hf60hd stgd3hf60hdt4 stgf3hf60hd stgp3hf60hd.pdf

STGP3HF60HD
STGP3HF60HD

STGB3HF60HD, STGD3HF60HDT4, STGF3HF60HD, STGP3HF60HD 4.5 A, 600 V very fast IGBT with Ultrafast diode Datasheet - production data Features Minimal tail current Low conduction and switching losses Ultrafast soft recovery antiparallel diode Applications Motor drive Description These devices are based on a new advanced planar technology concept to yield an I

 9.1. Size:657K  st
stgf30nc60s stgp30nc60s stgwf30nc60s.pdf

STGP3HF60HD
STGP3HF60HD

STGF30NC60SSTGP30NC60S, STGWF30NC60S30 A, 600 V, fast IGBTFeaturesTAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat))332 High current capability 211TO-220 TO-220FPApplication1113Motor drive21TO-3PFDescriptionThis device utilizes the advanced PowerMESHTM process result

 9.2. Size:741K  st
stgb35n35lz stgp35n35lz.pdf

STGP3HF60HD
STGP3HF60HD

STGB35N35LZSTGP35N35LZEAS 450 mJ, 345 V, internally clamped IGBTFeaturesTAB Low threshold voltage TAB Low on-voltage drop High voltage clamping feature 31 Gate and gate-emitter integrated resistorsTABDPAK321IPAKApplication Automotive ignition321TO-220DescriptionThis application specific IGBT utilizes the most advanced PowerMES

 9.3. Size:1911K  st
stgb30v60df stgp30v60df stgw30v60df stgwt30v60df.pdf

STGP3HF60HD
STGP3HF60HD

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma

 9.4. Size:388K  st
stgb30nc60k stgp30nc60k.pdf

STGP3HF60HD
STGP3HF60HD

STGB30NC60KSTGP30NC60K30 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s3 32Applications 11DPAKTO-220 High frequency inverters Motor driversDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an

 9.5. Size:366K  st
stgp3nb60hd stgp3nb60hdfp.pdf

STGP3HF60HD
STGP3HF60HD

STGP3NB60HDSTGP3NB60HDFPN-CHANNEL 3A - 600V TO-220/FPPowerMESH IGBTTYPE VCES VCE(sat) ICSTGP3NB60HD 600 V

 9.6. Size:322K  st
stgp3nb60h.pdf

STGP3HF60HD
STGP3HF60HD

STGP3NB60HN-CHANNEL 3A - 600V / TO-220PowerMESH IGBTTYPE VCES VCE(sat) ICSTGP3NB60H 600 V

 9.7. Size:757K  st
stgp3nc120hd.pdf

STGP3HF60HD
STGP3HF60HD

STGB3NC120HDSTGF3NC120HD, STGP3NC120HD7 A, 1200 V very fast IGBT with ultrafast diodeFeaturesTAB High voltage capability High speed Very soft ultrafast recovery anti-parallel diode332211Applications TO-220FPTO-220 Home applianceTAB Lighting31DescriptionDPAKThis high voltage and very fast IGBT shows an excellent trade-off between l

 9.8. Size:707K  st
stgp3nb60k.pdf

STGP3HF60HD
STGP3HF60HD

STGP3NB60K - STGD3NB60KSTGP3NB60KD-STGP3NB60KDFP-STGB3NB60KDN-CHANNEL 3A - 600V - TO-220/DPAK/D2PAKPowerMESH IGBTTYPEVCES VCE(sat) IC(Typ) @125C @125CSTGP3NB60K 600 V

 9.9. Size:612K  st
stgp30h60df.pdf

STGP3HF60HD
STGP3HF60HD

STGB30H60DF STGP30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - preliminary dataFeatures High speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time 3 3211 Ultrafast soft recovery antiparallel diodeTO-220Applications DPAK Motor controlDescriptionFig

 9.10. Size:741K  st
stgp35n35lz.pdf

STGP3HF60HD
STGP3HF60HD

STGB35N35LZSTGP35N35LZEAS 450 mJ, 345 V, internally clamped IGBTFeaturesTAB Low threshold voltage TAB Low on-voltage drop High voltage clamping feature 31 Gate and gate-emitter integrated resistorsTABDPAK321IPAKApplication Automotive ignition321TO-220DescriptionThis application specific IGBT utilizes the most advanced PowerMES

 9.11. Size:763K  st
stgb3nc120hd stgf3nc120hd stgp3nc120hd.pdf

STGP3HF60HD
STGP3HF60HD

STGB3NC120HDSTGF3NC120HD, STGP3NC120HD7 A, 1200 V very fast IGBT with ultrafast diodeFeaturesTAB High voltage capability High speed Very soft ultrafast recovery anti-parallel diode332211Applications TO-220FPTO-220 Home applianceTAB Lighting31DescriptionDPAKThis high voltage and very fast IGBT shows an excellent trade-off between l

 9.12. Size:491K  st
stgp30nc60s.pdf

STGP3HF60HD
STGP3HF60HD

STGF30NC60SSTGP30NC60S, STGWF30NC60S30 A, 600 V, fast IGBTFeaturesTAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat))332 High current capability 211TO-220 TO-220FPApplication1113Motor drive21TO-3PFDescriptionThis device utilizes the advanced PowerMESH process resul

 9.13. Size:689K  st
stgp30m65df2.pdf

STGP3HF60HD
STGP3HF60HD

STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) CTAB Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode 321Appl

 9.14. Size:411K  st
stgp3nb60s-stgd3nb60s.pdf

STGP3HF60HD
STGP3HF60HD

STGP3NB60SSTGD3NB60SN-CHANNEL 3A - 600V - TO-220 / DPAKPowerMESH IGBTTYPE VCES VCE(sat) ICSTGP3NB60S 600 V

 9.15. Size:1944K  st
stgb30h60df stgf30h60df stgp30h60df stgw30h60df.pdf

STGP3HF60HD
STGP3HF60HD

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

 9.16. Size:1905K  st
stgp30v60df.pdf

STGP3HF60HD
STGP3HF60HD

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma

 9.17. Size:771K  st
stgp35hf60w.pdf

STGP3HF60HD
STGP3HF60HD

STGP35HF60W35 A, 600 V Ultrafast IGBTDatasheet - production dataFeatures Improved Eoff at elevated temperature Minimal tail current Low conduction lossesApplications Welding321 High frequency converters Power factor correctionTO-220DescriptionThis Ultrafast IGBT is developed using a new planar technology to yield a device with tighter switch

 9.18. Size:798K  st
stgb30h60dfb stgp30h60dfb.pdf

STGP3HF60HD
STGP3HF60HD

STGB30H60DFB, STGP30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 CTABTAB High speed switching series Minimized tail current3 Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A132D PAK TO-220 2 Tight parameter distribution1 Safe paralleling Positive V

 9.19. Size:1046K  st
stgp30h65f.pdf

STGP3HF60HD
STGP3HF60HD

STGP30H65FTrench gate field-stop IGBT, H series 650 V, 30 A high speedDatasheet - production dataFeatures High speed switching Tight parameters distributionTAB Safe paralleling Low thermal resistance Short-circuit rated321ApplicationsTO-220 Inverter UPS PFCDescriptionFigure 1. Internal schematic diagramThis device is an IGBT deve

 9.20. Size:1448K  st
stgp30v60f.pdf

STGP3HF60HD
STGP3HF60HD

STGB30V60F, STGP30V60FTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB Tail-less switching offTAB VCE(sat) = 1.85 V (typ.) @ IC = 30 A Tight parameters distribution Safe paralleling33121 Low thermal resistanceD2PAKTO-220Applications Ph

 9.21. Size:637K  st
stgf3nc120hd stgp3nc120hd.pdf

STGP3HF60HD
STGP3HF60HD

STGF3NC120HDSTGP3NC120HD7 A, 1200 V very fast IGBTFeatures Low on-voltage drop (VCE(sat))TAB High current capability Off losses include tail current High speed332211ApplicationTO-220FPTO-220 Home appliance LightingDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal

Другие IGBT... STGB19NC60KDT4 , STGB20H65DFB2 , STGB20M65DF2 , STGB30H60DFB , STGP30H60DFB , STGB3HF60HD , STGD3HF60HDT4 , STGF3HF60HD , RJP30H2A , STGB40H65FB , STGB5H60DF , STGD5H60DF , STGF5H60DF , STGP5H60DF , STGB6NC60HDT4 , STGD4M65DF2 , STGD6M65DF2 .

 

 
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