STGF20M65DF2 Todos los transistores

STGF20M65DF2 Datasheet Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT Features High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameter distribution Safer paralleling 3 2 Low thermal resistance 1 Soft and very fast recovery antiparallel diode TO-220FP C (2) Applications Motor control UPS PFC G (1)

STGF20NB60S N-CHANNEL 13A - 600V TO-220FP PowerMESH IGBT Table 1 General Features Figure 1 Package TYPE VCES VCE(sat) (Max) IC @25 C @100 C STGF20NB60S 600 V

STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 Safe paralleling 3 2 2 1 1 Low thermal resistance TO-220 TO-220FP Short-circuit rated Ultrafast soft recovery antiparallel diode TAB Applications 3 1 Motor contr