All IGBT. STGF20M65DF2 Datasheet

 

STGF20M65DF2 Datasheet and Replacement


   Type Designator: STGF20M65DF2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G20M65DF2
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 32.6 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 10.8 nS
   Coesⓘ - Output Capacitance, typ: 95 pF
   Qg ⓘ - Total Gate Charge, typ: 63 nC
   Package: TO220F
 

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STGF20M65DF2 Datasheet (PDF)

 ..1. Size:526K  st
stgf20m65df2.pdf pdf_icon

STGF20M65DF2

STGF20M65DF2DatasheetTrench gate field-stop, M series, 650 V, 20 A, low-loss IGBTFeatures High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameter distribution Safer paralleling32 Low thermal resistance1 Soft and very fast recovery antiparallel diodeTO-220FPC (2) Applications Motor control UPS PFCG (1)

 8.1. Size:281K  st
stgf20nb60s.pdf pdf_icon

STGF20M65DF2

STGF20NB60SN-CHANNEL 13A - 600V TO-220FPPowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGF20NB60S 600 V

 8.2. Size:1853K  st
stgf20h60df.pdf pdf_icon

STGF20M65DF2

STGB20H60DF, STGF20H60DF, STGP20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution3 Safe paralleling32211 Low thermal resistanceTO-220 TO-220FP Short-circuit rated Ultrafast soft recovery antiparallel diodeTABApplications31 Motor contr

Datasheet: STGD5H60DF , STGF5H60DF , STGP5H60DF , STGB6NC60HDT4 , STGD4M65DF2 , STGD6M65DF2 , STGD7NC60HT4 , STGF15M65DF2 , IRG7IC28U , STGF30M65DF2 , STGWA40H65FB , STGP10M65DF2 , STGP20M65DF2 , STGP30M65DF2 , STGW100H65FB2-4 , STGW10M65DF2 , STGWA30H60DFB .

Keywords - STGF20M65DF2 transistor datasheet

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