STGP10M65DF2 Todos los transistores

 

STGP10M65DF2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGP10M65DF2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 115 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

trⓘ - Tiempo de subida, typ: 7.4 nS

Coesⓘ - Capacitancia de salida, typ: 63 pF

Encapsulados: TO220

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STGP10M65DF2 datasheet

 ..1. Size:781K  st
stgp10m65df2.pdf pdf_icon

STGP10M65DF2

STGP10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220 package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 10 A CE(sat) C TAB Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance 3 Soft and very fast

 8.1. Size:1722K  st
stgp10h60df.pdf pdf_icon

STGP10M65DF2

STGB10H60DF, STGF10H60DF, STGP10H60DF Trench gate field-stop IGBT, H series 600 V, 10 A high speed Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 Safe paralleling D PAK Low thermal resistance TAB Short-circuit rated Ultrafast soft recovery antiparallel diode Applications 3 3 2 2 1 1 Motor cont

 8.2. Size:288K  st
stgp10nb60s.pdf pdf_icon

STGP10M65DF2

STGP10NB60S N-CHANNEL 10A - 600V TO-220 PowerMESH IGBT TYPE VCES VCE(sat) IC STGP10NB60S 600 V

 8.3. Size:607K  st
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf pdf_icon

STGP10M65DF2

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM

Otros transistores... STGB6NC60HDT4 , STGD4M65DF2 , STGD6M65DF2 , STGD7NC60HT4 , STGF15M65DF2 , STGF20M65DF2 , STGF30M65DF2 , STGWA40H65FB , GT30F126 , STGP20M65DF2 , STGP30M65DF2 , STGW100H65FB2-4 , STGW10M65DF2 , STGWA30H60DFB , STGW30M65DF2 , STGWA30M65DF2 , STGWA60V60DF .

History: JT100K120F2MA1E | IXSH45N120B | IXSX40N60BD1 | SPD15N65T1T0TL | SGR5N60RUF

 

 

 

 

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