STGP10M65DF2 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: STGP10M65DF2
Тип транзистора: IGBT + Diode
Маркировка: G10M65DF2
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 115 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 7.4 nS
Coesⓘ - Выходная емкость, типовая: 63 pF
Qgⓘ - Общий заряд затвора, typ: 28 nC
Тип корпуса: TO220
Аналог (замена) для STGP10M65DF2
STGP10M65DF2 Datasheet (PDF)
stgp10m65df2.pdf
STGP10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220 package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 10 A CE(sat) CTAB Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance 3 Soft and very fast
stgp10h60df.pdf
STGB10H60DF, STGF10H60DF, STGP10H60DFTrench gate field-stop IGBT, H series 600 V, 10 A high speedDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution31 Safe parallelingDPAK Low thermal resistanceTAB Short-circuit rated Ultrafast soft recovery antiparallel diodeApplications332211 Motor cont
stgp10nb60s.pdf
STGP10NB60SN-CHANNEL 10A - 600V TO-220PowerMESH IGBTTYPE VCES VCE(sat) ICSTGP10NB60S 600 V
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf
STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM
stgp10nc60h.pdf
STGP10NC60HN-channel 10A - 600V - TO-220Very fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType(Max)@ 25C @100CSTGP10NC60H 600V
stgp10nc60hd.pdf
STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant
stgf100n30 stgp100n30 stgw100n30.pdf
STGF100N30STGP100N30, STGW100N3090 A - 330 V - fast IGBTFeatures Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET technology 3 32 21 Peak collector current IRP = 330 A @ 1TC = 25 C (see Table 2)TO-220FPTO-247 Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency
stgb10nc60k stgp10nc60k stgd10nc60k.pdf
STGB10NC60K - STGD10NC60KSTGP10NC60KN-channel 600V - 10A - D2PAK / TO-220 / DPAKShort circuit rated PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGB10NC60K 600V
stgp10nc60s.pdf
STGD10NC60SSTGP10NC60S10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switchingTAB Low on-voltage drop (VCE(sat))TABApplication3321 1 Motor driveDPAK TO-220DescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low
stgb10nc60kdt4 stgd10nc60kdt4 stgf10nc60kd stgp10nc60kd.pdf
STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IESsusceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor
stgd10nc60s stgp10nc60s.pdf
STGD10NC60SSTGP10NC60S10 A - 600 V fast IGBTFeatures Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies33211ApplicationDPAK TO-220 Medium frequency motor controlDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of
stgp10nb60sfp.pdf
STGP10NB60SFPN-CHANNEL 10A - 600V - TO-220FPPowerMesh IGBTTYPE VCES VCE(sat) ICSTGP10NB60SFP 600
stgf10nb60sd stgp10nb60sd.pdf
STGF10NB60SDSTGP10NB60SD16 A, 600 V, low drop IGBT with soft and fast recovery diodeFeatures Low on-voltage drop (VCE(sat)) High current capability TAB Very soft ultra fast recovery antiparallel diodeApplications3 32211 Light dimmer Static relaysTO-220FPTO-220 Motor driveDescriptionThis IGBT utilizes the advanced Power MESH Figure 1.
stgp10nb60sd.pdf
STGF10NB60SDSTGP10NB60SD16 A, 600 V, low drop IGBT with soft and fast recovery diodeFeatures Low on-voltage drop (VCE(sat)) High current capability TAB Very soft ultra fast recovery antiparallel diodeApplications3 32211 Light dimmer Static relaysTO-220FPTO-220 Motor driveDescriptionThis IGBT utilizes the advanced Power MESH Figure 1.
stgb10nb37lz stgp10nb37lz.pdf
STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off
stgp10nb60s stgp10nb60sfp stgb10nb60s.pdf
STGP10NB60SSTGP10NB60SFP- STGB10NB60SN-CHANNEL 10A - 600V - TO-220/TO-220FP/DPAKPowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGP10NB60S 600 V
stgp10nc60kd.pdf
STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM
stgp10nb37lz.pdf
STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off
stgb10nc60hd stgd10nc60hd stgf10nc60hd stgp10nc60hd.pdf
STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
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