STGP30M65DF2 Todos los transistores

 

STGP30M65DF2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGP30M65DF2
   Tipo de transistor: IGBT + Diode
   Código de marcado: G30M65DF2
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 258
   Tensión máxima colector-emisor |Vce|, V: 650
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 60
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.55
   Tensión máxima de puerta-umbral |VGE(th)|, V: 7
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 13.4
   Capacitancia de salida (Cc), typ, pF: 143
   Carga total de la puerta (Qg), typ, nC: 80
   Paquete / Cubierta: TO220

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STGP30M65DF2 Datasheet (PDF)

 ..1. Size:689K  st
stgp30m65df2.pdf

STGP30M65DF2
STGP30M65DF2

STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) CTAB Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode 321Appl

 8.1. Size:657K  st
stgf30nc60s stgp30nc60s stgwf30nc60s.pdf

STGP30M65DF2
STGP30M65DF2

STGF30NC60SSTGP30NC60S, STGWF30NC60S30 A, 600 V, fast IGBTFeaturesTAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat))332 High current capability 211TO-220 TO-220FPApplication1113Motor drive21TO-3PFDescriptionThis device utilizes the advanced PowerMESHTM process result

 8.2. Size:1911K  st
stgb30v60df stgp30v60df stgw30v60df stgwt30v60df.pdf

STGP30M65DF2
STGP30M65DF2

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma

 8.3. Size:388K  st
stgb30nc60k stgp30nc60k.pdf

STGP30M65DF2
STGP30M65DF2

STGB30NC60KSTGP30NC60K30 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s3 32Applications 11DPAKTO-220 High frequency inverters Motor driversDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an

 8.4. Size:612K  st
stgp30h60df.pdf

STGP30M65DF2
STGP30M65DF2

STGB30H60DF STGP30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - preliminary dataFeatures High speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time 3 3211 Ultrafast soft recovery antiparallel diodeTO-220Applications DPAK Motor controlDescriptionFig

 8.5. Size:491K  st
stgp30nc60s.pdf

STGP30M65DF2
STGP30M65DF2

STGF30NC60SSTGP30NC60S, STGWF30NC60S30 A, 600 V, fast IGBTFeaturesTAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat))332 High current capability 211TO-220 TO-220FPApplication1113Motor drive21TO-3PFDescriptionThis device utilizes the advanced PowerMESH process resul

 8.6. Size:1944K  st
stgb30h60df stgf30h60df stgp30h60df stgw30h60df.pdf

STGP30M65DF2
STGP30M65DF2

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

 8.7. Size:1905K  st
stgp30v60df.pdf

STGP30M65DF2
STGP30M65DF2

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma

 8.8. Size:798K  st
stgb30h60dfb stgp30h60dfb.pdf

STGP30M65DF2
STGP30M65DF2

STGB30H60DFB, STGP30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 CTABTAB High speed switching series Minimized tail current3 Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A132D PAK TO-220 2 Tight parameter distribution1 Safe paralleling Positive V

 8.9. Size:1046K  st
stgp30h65f.pdf

STGP30M65DF2
STGP30M65DF2

STGP30H65FTrench gate field-stop IGBT, H series 650 V, 30 A high speedDatasheet - production dataFeatures High speed switching Tight parameters distributionTAB Safe paralleling Low thermal resistance Short-circuit rated321ApplicationsTO-220 Inverter UPS PFCDescriptionFigure 1. Internal schematic diagramThis device is an IGBT deve

 8.10. Size:1448K  st
stgp30v60f.pdf

STGP30M65DF2
STGP30M65DF2

STGB30V60F, STGP30V60FTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB Tail-less switching offTAB VCE(sat) = 1.85 V (typ.) @ IC = 30 A Tight parameters distribution Safe paralleling33121 Low thermal resistanceD2PAKTO-220Applications Ph

Otros transistores... STGD6M65DF2 , STGD7NC60HT4 , STGF15M65DF2 , STGF20M65DF2 , STGF30M65DF2 , STGWA40H65FB , STGP10M65DF2 , STGP20M65DF2 , MBQ50T65FDSC , STGW100H65FB2-4 , STGW10M65DF2 , STGWA30H60DFB , STGW30M65DF2 , STGWA30M65DF2 , STGWA60V60DF , STGW75H65DFB2-4 , STGW75M65DF2 .

 

 
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